Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/<i>p</i>-Si structure

Qin, G. G.; Li, A. P.; Zhang, B. R.; Li, Bing‐Chen

doi:10.1063/1.360175

Cited by 128 publications

(22 citation statements)

References 16 publications

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“…20 It is more likely originated from luminescent defect centers. [21][22][23] Figure 7 shows the evolution of the integrated PL intensity as a function of the particle density of the Si nanostructures, the PL intensity has a minimum for the sample SO-10 (5 % O 2 ), which corresponds to the lowest particle density (Table 2), the maximum integrated intensity is observed for the sample SO-0 of the highest particle density. This behavior of PL intensity is probably due to the enhancement of the light harvesting efficiency of prepared Si nanostructures with the increase of their particle density.…”

Section: Etching Ratementioning

confidence: 99%

Silicon Nanostructuring Using SF6/O2 Downstram Plasma Etching: Morphological, Optical and Sensing Properties

et al. 2018

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Silicon (Si) nanostructures were prepared in the downstream of radiofrequency SF 6 /O 2 mixture plasma generated in 13.56 MHz hollow cathode discharge system. Depending on the oxygen percentage in the mixture, the obtained Si nanostructures were characterized for their different properties: etching rate, morphology, optical reflectance, photoluminescence, spectral response and humidity sensing. It is found that the etching rate exhibits a maximum value when the O 2 ratio reaches 5%. An interesting defect-induced "violet" luminescence is reported from the Si nanostructures, whose intensity depends on their density. The obtained Si nanostructures have shown to induce a spectral response (SR) enhancement, in comparison with a smooth Si substrate, of about 100 times at 1100 nm wavelength. A very short response time (1 sec) to the humidity was measured for 5% O 2 in the SF 6 /O 2 plasma mixture, which was found to be well-correlated with the porosity of the Si nanostructures.

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Section: Etching Ratementioning

confidence: 99%

Silicon Nanostructuring Using SF6/O2 Downstram Plasma Etching: Morphological, Optical and Sensing Properties

et al. 2018

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“…The presence of Ge nanoclusters provides high high-energy excitons, higher than the bulk Ge bandgap energy, and a high density of interface states that lead to PL with band energies higher than the bulk Ge bandgap. This model has been extensively used to explain luminescence properties from Si and Ge nanocluster systems [25][26][27][28][29]. We have noticed that our observed P1 and P2 bands are in similar energy positions to the dislocation centers D1 and D2, to which are attributed the emission lines of 0.808 (D1) and 0.875 (D2) meV [20,30,31].…”

Section: Photoluminescence Of Ge Nanoclustersmentioning

confidence: 67%

Buffer layer-assisted growth of Ge nanoclusters on Si

Li¹,

Wendelken²

2006

Nanoscale Res Lett

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In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicability, the buffer layer-assisted growth method has provided a unique avenue for creation of nanostructures that are otherwise impossible to grow, and thus offered unprecedented opportunities for fundamental and applied research in nanoscale science and technology. In this article, we review recent progress in the application of the buffer layer-assisted growth method to the fabrication of Ge nanoclusters on Si substrates. In particular, we emphasize the novel configurations of the obtained Ge nanoclusters, which are characterized by the absence of a wetting layer, quasi-zero dimensionality with tunable sizes, and high cluster density in comparison with Ge nanoclusters that are formed with standard Stranski-Krastanov growth methods. The optical emission behaviors are discussed in correlation with the morphological properties.

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“…In the previous work [10,11], it has been suggested that the PL from a-SiNx:H is mainly in three process, i.e., the luminescence from Si nanoparticles, the interface luminescence between silicon and silicon nitride, and gap states luminescence from the imperfection of silicon nitride matrix. Three origins are inherently coexisting in the a-SiNx: H films and the photoluminescence spectrum depends on the contribution of each part.…”

Section: Resultsmentioning

confidence: 99%

<title>Comparative analysis of photoluminescence in nano-sized amorphous and crystalline silicon embedded in silicon nitride thin film</title>

Ding

Zhang

et al. 2006

SPIE Proceedings

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Nano-sized amorphous silicon embedded in SiN x films are prepared by helicon wave plasma-enhanced chemical vapor deposition technique (HWP-CVD), and Si nanocrystals embedded in SiN x films is obtained after furnace annealing (FA) in nitrogen ambient. The structure and optical properties of nano-sized amorphous and crystalline silicon embedded in silicon nitride (SiN x ) thin film is comparatively analyzed. Raman scattering measurement shows that, apart from appearance of a new peak at about 496-510cm -1 corresponding to Si nanocrystals scattering, the relative scattering intensity of the two peaks located at 150 cm -1 and at 480cm -1 increases after high temperature annealing, indicating that the microstructures of the annealed films becomes more disordered. Meanwhile, the photothermal deflection spectra (PDS) show the optical absorption coefficient of annealed samples in the band gap increases in about one order of magnitude, indicating that more gap states exist in the annealed samples. After further annealing in forming gas and comparing the PL results of both as-deposited and thermal treatment thin film, it is found that red shift of the main peak of PL spectra is correlated with the enlarge of the silicon size. The role of interface states between silicon clusters and SiN x matrix influence the PL behavior is discussed.

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Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure

Cited by 128 publications

References 16 publications

Silicon Nanostructuring Using SF6/O2 Downstram Plasma Etching: Morphological, Optical and Sensing Properties

Silicon Nanostructuring Using SF6/O2 Downstram Plasma Etching: Morphological, Optical and Sensing Properties

Buffer layer-assisted growth of Ge nanoclusters on Si

<title>Comparative analysis of photoluminescence in nano-sized amorphous and crystalline silicon embedded in silicon nitride thin film</title>

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