Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor

Dimitrova, V.; Patten, P. Gregory Van; Richardson, Hugh H.; Kordesch, Martin E.

doi:10.1063/1.127016

Cited by 68 publications

(31 citation statements)

References 10 publications

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“…AlN with its large band gap allows energetically high lying RE levels to be exploited and thermal quenching of the luminescence is expected to be small [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of Er implanted AlN thin films: Green and infrared photoluminescence at room temperature

Soares¹,

Leitão²,

Silva³

et al. 2011

Optical Materials

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“…AlN with its large band gap allows energetically high lying RE levels to be exploited and thermal quenching of the luminescence is expected to be small [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of Er implanted AlN thin films: Green and infrared photoluminescence at room temperature

Soares¹,

Leitão²,

Silva³

et al. 2011

Optical Materials

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“…2 For RE-doped AlN, red emission has also been reported from Eu, and green emission from Erand Tb-doped amorphous and crystalline films. [10][11][12] Recently, blue CL was reported from Tm-impanted AlN 13 and efficient blue EL was demonstrated from in situ Tm-doped AlGaN films. 14 In this letter, we report on the PL properties of Al x Ga 1Ϫx N:Tm films under above-and below-gap pumping.…”

mentioning

confidence: 99%

Photoluminescence properties of in situ Tm-doped AlxGa1−xN

Hömmerich

Nyein

Lee

et al. 2003

Applied Physics Letters

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We report on the photoluminescence ͑PL͒ properties of in situ Tm-doped Al x Ga 1Ϫx N films (0рx р1) grown by solid-source molecular-beam epitaxy. It was found that the blue PL properties of Al x Ga 1Ϫx N:Tm greatly change as a function of Al content. Under above-gap pumping, GaN:Tm exhibited a weak blue emission at ϳ478 nm from the 1 G 4 → 3 H 6 transition of Tm 3ϩ . Upon increasing Al content, an enhancement of the blue PL at 478 nm was observed. In addition, an intense blue PL line appeared at ϳ465 nm, which is assigned to the 1 D 2 → 3 F 4 transition of Tm 3ϩ . The overall blue PL intensity reached a maximum for xϭ0.62, with the 465 nm line dominating the visible PL spectrum. Under below-gap pumping, AlN:Tm also exhibited intense blue PL at 465 and 478 nm, as well as several other PL lines ranging from the ultraviolet to near-infrared. The Tm 3ϩ PL from AlN:Tm was most likely excited through defect-related complexes in the AlN host.

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“…AlGaN:Er has a wider bandgap than GaN:Er and prevents charge flow until fields are at levels high enough (~1 MV/cm) for efficient generation of hot carriers (~2.3 eV). Promising results with green light emission from AlN:Er AC-ELDs [17] has prompted this investigation of Al x Ga 1-x N:RE phosphors. The lower brightness values observed for the higher Al content (> 40%) samples is partly due to the increase in phosphor breakdown field.…”

Section: Resultsmentioning

confidence: 99%

AC Operation of GaN:Er Thin Film Electroluminescent Display Devices

Heikenfeld

Steckl

2000

MRS Proc.

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Thin-film electroluminescence has been obtained from GaN:Er deposited directly on amorphous dielectric layers. Electroluminescent device (ELD) structures consisting of a dielectric/GaN/dielectric were formed on p + -Si substrates. In contrast to previous GaN:Er ELDs which used epitaxial growth conditions on crystalline substrates and were operated under DC bias, these ELDs were operated under AC bias. A maximum luminance value of 300, 60, and 15 cd/m 2 has been achieved from GaN:Er and AlGaN:Er AC-ELDs biased at 180 V and 100, 10, and 1 kHz, respectively. The emission spectra, which originate from Er 3+ 4f-4f transitions, consist of dominant visible emission at ~537/558 nm and infra-red (IR) emission at 1.5 µm. A violet emission peak at 415 nm indicates that hot carriers can gain up to ~3 eV energy for an applied voltage corresponding to 1.5 MV/cm applied field. The emitted intensity initially increases linearly with frequency, followed by a trend towards saturation. The frequency for 3 dB reduction from the linear relation is at ~65 kHz for visible emission and ~8 kHz for infrared emission. The saturation trends can be explained in terms of the spontaneous emission lifetimes of the visible (~10 µs) and IR (~1ms) Er 3+ emissions.

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Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor

Cited by 68 publications

References 10 publications

Structural and optical properties of Er implanted AlN thin films: Green and infrared photoluminescence at room temperature

Structural and optical properties of Er implanted AlN thin films: Green and infrared photoluminescence at room temperature

Photoluminescence properties of in situ Tm-doped AlxGa1−xN

AC Operation of GaN:Er Thin Film Electroluminescent Display Devices

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