Visible-light absorption and large band-gap bowing of GaN<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Sb<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mi>x</mml:mi></mml:msub></mml:math>from first principles

Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; Lisenkov, S.; Pendyala, Chandrashekhar; Sunkara, Mahendra; Menon, Madhu

doi:10.1103/physrevb.84.075304

Cited by 34 publications

(21 citation statements)

References 25 publications

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“…7 In the case of GaN 1Àx Sb x , the anion mismatch is even larger than that exhibited in the N-rich GaN 1Àx As x alloys. Band anticrossing (BAC) calculations on the electronic band structure of the GaN 1Àx Sb x alloys predicts that less than 6% of Sb is needed to achieve an alloy with a bandgap $2.2 eV with the CB and VB still straddling the redox potential.…”

mentioning

confidence: 89%

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

Sarney

Novikov

et al. 2013

Applied Physics Letters

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We have grown N-rich, dilute Sb GaN1−xSbx alloys by low temperature molecular beam epitaxy. At low growth temperature of <100 °C the material loses crystallinity and becomes primarily amorphous with small crystallites of 2–5 nm at a Sb composition of >4 at. %. Despite the different microstructures found for GaN1−xSbx alloys with different composition, the absorption edge shifts continuously from 3.4 eV (GaN) to close to 1 eV for samples with Sb content >30 at. %. GaN1−xSbx alloys with less than 5 at. % Sb show sufficient bandgap reduction (∼2 eV), making them suitable for photoelectrochemical applications.

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confidence: 89%

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

Sarney

Novikov

et al. 2013

Applied Physics Letters

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“…Hence, GaN 1Àx Sb x HMAs could be suitable as photoelectrodes for photoelectrochemical water splitting applications. 16 Previously, we reported the synthesis of GaN 1Àx Sb x HMAs using low temperature plasma assisted molecular beam epitaxy (LT-PAMBE). We demonstrated that the fundamental band gap, as well as the energies of the CBM and VBM, can be controlled with the alloy composition in GaN 1Àx Sb x .…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of highly mismatched GaN1−xSbx alloys

Новиков

Min

et al. 2014

Journal of Applied Physics

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A systematic investigation on the effects of growth temperature, Ga flux, and Sb flux on the incorporation of Sb, film structure, and optical properties of the GaN 1Àx Sb x highly mismatched alloys (HMAs) was carried out. We found that the direct bandgap ranging from 3.4 eV to below 1.0 eV for the alloys grown at low temperature. At the growth temperature of 80 C, GaN 1Àx Sb x with x > 6% losses crystallinity and becomes primarily amorphous with small crystallites of 2-5 nm. Despite the range of microstructures found for GaN 1Àx Sb x alloys with different composition, a well-developed absorption edge shifts from 3.4 eV (GaN) to close to 2 eV for samples with a small amount, less than 10% of Sb. Luminescence from dilute GaN 1Àx Sb x alloys grown at high temperature and the bandgap energy for alloys with higher Sb content are consistent with a localized substitutional Sb level E Sb at $1.1 eV above the valence band of GaN. The decrease in the bandgap of GaN 1Àx Sb x HMAs is consistent with the formation of a Sb-derived band due to the anticrossing interaction of the Sb states with the valence band of GaN. V C 2014 AIP Publishing LLC.[http://dx

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“…Since the anion mismatch is even larger between Sb and N, BAC calculations on the electronic band structure of the GaN1-xSbx alloys predict that less than 6% of Sb is needed to achieve an alloy with a bandgap ~2.2 eV with the conduction band minimum (CBM) and the valence band maximum (VBM) still straddling the water redox potentials. Hence GaN1-xSbx HMAs could be suitable as photoelectrodes for photoelectrochemical water splitting applications [40]. Although GaSbN dilute nitride films have been studied in the last decade, there is little to nothing known about the growth of GaN1-xSbx alloys in the N-rich regime.…”

Section: Lt-mbe Gan 1-x Sb X Hmasmentioning

confidence: 99%

“…The unusual evolution of the band gap and the conduction and valence band energies generated interest in potential applications of these HMAs for solar power conversion applications [39]. This review focuses on the GaNxSb1-x HMA which has been suggested as a potential material for solar driven water dissociation [40,41]. However it should be emphasized that the BAC model of the electronic band structure developed for the full composition of GaNxSb1-x is general and is applicable to any HMA.…”

Section: Introductionmentioning

confidence: 99%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N-V HMAs over almost the entire composition range. This paper focuses on the GaNxSb1-x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1-xSbx HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1-xSbx HMA over the entire composition range is well described by a modified the BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaNxSb1-x is general and is applicable to any HMA.

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Visible-light absorption and large band-gap bowing of GaN1−xSbxfrom first principles

Cited by 34 publications

References 25 publications

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

Growth and characterization of highly mismatched GaN1−xSbx alloys

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

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Visible-light absorption and large band-gap bowing of GaN1−xSbxfrom first principles

Cited by 34 publications

References 25 publications

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

Growth and characterization of highly mismatched GaN1−xSbx alloys

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

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Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties