Visible Light Control by GaN Photonic Band Gaps

Barra, Anthony; Cassagne, D.; Jouanin, C.

doi:10.1002/(sici)1521-396x(199911)176:1<747::aid-pssa747>3.0.co;2-z

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…The mid-gap frequency of the PBG of triangular PCs of air hole in GaN (with dielectric constant ε ~ 8) is estimated to be around the normalized frequency (a/λ) of 0.5. 22 A periodicity of less than 240 nm is required to tune the PBG to the emission wavelength λ = 475 nm of the structure. Secondly, the photonic crystal periodicity folds the higher momentum guided modes, which lie below the air light line defined by ω = c |k o | with k o being the in-plane wave vector in air, to the first Brillouin zone.…”

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confidence: 99%

III-nitride blue and UV photonic-crystal light-emitting diodes

et al. 2004

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We report on the successful nano-fabrication and characterization of III-nitride blue and ultraviolet (UV) photonic crystal light emitting diodes (PC-LEDs) using electron beam lithography and inductively coupled plasma dry etching. Triangular arrays of holes with different diameters/periodicities were etched on the LEDs. Optical measurements on the photonic crystals (PCs) performed using near-field scanning optical microscopy (NSOM) showed a 60 o periodic variation with the angle between the propagation direction of emission light and the PCs lattice. Under optical pumping, an unprecedented enhancement factor of 20 in emission light intensity of wavelength 475 nm was achieved at room temperature with emission light parallel to the Γ-K direction of the PCs lattice. Guided by the optical pumping results, new design geometry of LEDs with PCs has been employed to optimize the light extraction. Enhancement in optical power of current injected blue and UV PC-LEDs over conventional LEDs is discussed. It was observed that the optical enhancement factor depends strongly on the PC lattice constant and hole size. The achievement of nitride photonic crystal emitters with enhanced light extraction efficiency is expected to benefit many new applications of III-nitrides including solid-state lighting for general illumination and photonic integrated circuits operating in the visible and UV spectral regions.

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confidence: 99%

III-nitride blue and UV photonic-crystal light-emitting diodes

et al. 2004

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“…The midgap frequency of the PBG of triangular PCs of air hole in GaN with dielectric constant = 8.9 is estimated to be around the normalized frequency ͑a / ͒ of 0.5. 25 In AlN a periodicity of less than 104 nm is required to tune the PBG to the emission wavelength in deep UV ͑ϳ208 nm͒ region. The smallest normalized frequency of our structure is 0.72 for emission wavelength at 208 nm, which implies that photon modes in our structure lie above the cutoff frequency of guided modes.…”

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Deep ultraviolet photoluminescence studies of AlN photonic crystals

Nepal

Shakya

Nakarmi

et al. 2006

Applied Physics Letters

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Two-dimensional AlN photonic crystals (PCs) with varying periodicity/diameter down to 150∕75nm were fabricated. Deep ultraviolet photoluminescence spectroscopy has been employed to study the optical properties of AlN PCs. With PC formation, a 20-fold enhancement in the band edge emission intensity at 208nm over unpatterned AlN epilayer has been observed. The emission intensity increases with decreasing lattice constant of AlN PCs. However, the spectral peak energy decreases with decreasing lattice constant, indicating a possible release of compressive stresses as a result of PC formation. Successful fabrication of AlN PCs opens up new opportunities for exploring novel physical phenomena in the artificially structured photonic band gap material system and their applications, particularly in the area of deep UV photonics.

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Self-Assembled Guanosine-Based Nanoscale Molecular Photonic Devices

Morkoç̌

Neogi

2010

Nanoscale Photonics and Optoelectronics

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Visible Light Control by GaN Photonic Band Gaps

Cited by 5 publications

References 7 publications

III-nitride blue and UV photonic-crystal light-emitting diodes

III-nitride blue and UV photonic-crystal light-emitting diodes

Deep ultraviolet photoluminescence studies of AlN photonic crystals

Self-Assembled Guanosine-Based Nanoscale Molecular Photonic Devices

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