Visible light emission from MBD-grown   superlattices

Новиков, С. В.; Sinkkonen, J.; Kilpelä, O.; Gastev, S. V.

doi:10.1016/s0022-0248(96)00915-3

Cited by 24 publications

(9 citation statements)

References 6 publications

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“…The 1-nm-thick SiO 2 layers were grown with in situ oxidation of Si layers by oxygen plasma. 7 Si single films with thickness from 10 to 100 nm were also studied. We heated the samples up to 1200°C in nitrogen atmosphere by using rapid thermal annealing ͑RTA, 5 s, accuracy Ϯ20°C͒ and furnace annealing.…”

Section: Substrate-dependent Crystallization and Enhancement Of Visibmentioning

confidence: 99%

Substrate-dependent crystallization and enhancement of visible photoluminescence in thermal annealing of Si/SiO2 superlattices

Khriachtchev

Kilpelä

Karirinne

et al. 2001

Applied Physics Letters

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Section: Substrate-dependent Crystallization and Enhancement Of Visibmentioning

confidence: 99%

Substrate-dependent crystallization and enhancement of visible photoluminescence in thermal annealing of Si/SiO2 superlattices

Khriachtchev

Kilpelä

Karirinne

et al. 2001

Applied Physics Letters

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“…The discovery by Lu, Lockwood, and Baribeau [1] of intense luminescence in Si/SiO 2 superlattices (SL) has led to numerous experimental [2][3][4][5][6] and theoretical studies [7][8][9][10][11] of their structural, electronic and optical properties. A blue shift with increased confinement is reported in most experimental and in all theoretical works.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence within Crystalline-Si/SiO₂ Single Quantum Wells.

Lockwood

Dharma‐wardana

et al. 2002

MRS Proc.

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Ultrathin single quantum wells of crystalline silicon (c-Si) confined by SiO 2 have been prepared by chemical and thermal processing of silicon-on-insulator wafers. The photoluminescence (PL) produced by these nanometer-thick single wells contains two bands: one exhibits a peak energy of~1.8 eV, while the second increases rapidly in peak energy with decreasing c-Si layer thickness. Comparison with theories based on self-consistent firstprinciples calculations shows that the increase in PL peak energy of the second band is consistent with that predicted for the c-Si energy gap of such wells. It also agrees with the measured band gap variation. The~1.8 eV PL band is attributed to the recombination of electron-hole pairs confined at the c-Si/SiO 2 interface.

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“…21 The intravalence and intraconduction state electroabsorption curves of a 5 nmdiameter Si NC at T ¼ 300 K.…”

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confidence: 99%

Electronic and Optical Properties of Silicon Nanocrystals

Bulutay

Ossicini

2010

Silicon Nanocrystals

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Several strategies have been researched over the last few years for light generation and amplification in silicon. One of the most promising one is based on silicon nanocrystals (Si NCs) with the aim of taking advantage of the reduced dimensionality of the nanocrystalline phase (1-5 nm in size) where quantum confinement, band folding, and surface effects play a crucial role [1,2]. Indeed, it has been found that the Si NC bandgap increases with decrease in size and a photoluminescence (PL) external efficiency in excess of 23% is obtained [3]. Si NC-based LED with high efficiency have been obtained by using Si NC active layers [4] and achieving separate injection of electrons and holes [5]. Moreover, optical gain under optical pumping has been already demonstrated in a large variety of experimental conditions [6][7][8][9][10][11].After the initial impulse given by the pioneering work of Canham on photoluminescence from porous Si [12], nanostructured silicon has received extensive attention. This activity is mainly centered on the possibility of getting relevant optoelectronic properties from nanocrystalline Si. The huge efforts made toward matter manipulation at the nanometer scale have been motivated by the fact that desirable properties can be generated by just changing the system dimension and shape. Investigation of phenomena such as the Stokes shift (difference between absorption and emission energies), the PL emission energy versus nanocrystals size, the doping properties, the radiative lifetimes, the nonlinear optical properties, the quantum-confined Stark effect (QCSE), and so on can give a fundamental contribution to the understanding of how the optical response of such systems can be tuned. A considerable amount of work has been done on excited Si NCs [2, 13-23], but a clear understanding of some aspects is still lacking. The question of surface effects, in particular oxidation, has been addressed in the last few years. Both theoretical calculations and experimental observations have been applied to investigate the possible active role of the interface on the optoelectronic properties of Si NCs. Different models have been proposed: Baierle et al. [24] have considered the role of the surface geometry distortion of small hydrogenated Si clusters in the excited state.

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Visible light emission from MBD-grown superlattices

Cited by 24 publications

References 6 publications

Substrate-dependent crystallization and enhancement of visible photoluminescence in thermal annealing of Si/SiO2 superlattices

Substrate-dependent crystallization and enhancement of visible photoluminescence in thermal annealing of Si/SiO2 superlattices

Photoluminescence within Crystalline-Si/SiO₂ Single Quantum Wells.

Electronic and Optical Properties of Silicon Nanocrystals

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Visible light emission from MBD-grown superlattices

Cited by 24 publications

References 6 publications

Substrate-dependent crystallization and enhancement of visible photoluminescence in thermal annealing of Si/SiO2 superlattices

Substrate-dependent crystallization and enhancement of visible photoluminescence in thermal annealing of Si/SiO2 superlattices

Photoluminescence within Crystalline-Si/SiO2 Single Quantum Wells.

Electronic and Optical Properties of Silicon Nanocrystals

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Photoluminescence within Crystalline-Si/SiO₂ Single Quantum Wells.