Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p–n junctions

Wang, Jialin; Song, Jimei; Qin, Ling; Peng, Yingchun; Nötzel, R.

doi:10.1063/5.0082509

Cited by 25 publications

(13 citation statements)

References 26 publications

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“…The response time t res and recovery time t rec of the two types of photoelectrodes were further compared. The definition of t res and t rec is shown in Figure a, following the definition in the previously reported PEC-PD studies, e.g., refs , and . In this plot, the data was taken from the photoelectrode made with the TJ InGaN nanowires, and the applied potential was 0 V (vs Ag/AgCl) and the excitation power density was 0.8 mW cm –2 .…”

Section: Resultsmentioning

confidence: 99%

“…Indeed, high-performance PEC-PDs using epitaxial III-nitride nanowires as photoelectrodes have been demonstrated, in particular those in the UV band. − However, this device performance improvement is mainly driven through applying photocatalysts and/or combining a different material system to the nanowire photoelectrodes, which requires post-epitaxy processing. In this work, we demonstrate a new route to improve the performance of such nanowire-based PEC-PDs by incorporating a semiconductor tunnel junction (TJ), which can be naturally integrated in the epitaxy process of III-nitride nanowires, to the nanowire photoelectrode.…”

Section: Introductionmentioning

confidence: 99%

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Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors

Fathabadi

Zhao

2023

ACS Photonics

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Photodetection using photoelectrochemical (PEC) principles is an emerging field in photonics. In recent years, using epitaxial III-nitride nanowires as photoelectrodes, high-performance PEC-type photodetectors (PDs) have been demonstrated, making the epitaxial III-nitride nanowires a scalable, high-performance PEC-PD architecture. Despite the progress, the photodetection performance improvement mainly occurs through incorporating photocatalysts into the nanowire photoelectrodes. In this study, we show that a semiconductor tunnel junction (TJ), which can be a natural component in the epitaxy process of semiconductor nanowires, can drastically improve the photodetection performance of such nanowire-based PEC-PDs. By using a three-electrode PEC cell configuration, we clearly show that an n++-GaN/InGaN/p++-GaN TJ can lead to a factor of 9× improvement on the responsivity of the InGaN nanowire photoelectrode in the blue band due to the TJ-induced photocarrier dynamics tuning, compared to the InGaN nanowire photoelectrode without the TJ. More drastically, the TJ also improves the photoresponse speed of the nanowire photoelectrode by 2 orders of magnitude, and for the electrode with the TJ an ultrafast response time of less than 10 ms is estimated. This TJ concept can also be applied to other TJ structures for other band photodetections. This study therefore sheds new light on further improving the performance of emerging epitaxial nanowire-based PEC-PDs for a wide range of applications from sensing to information processing.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors

Fathabadi

Zhao

2023

ACS Photonics

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“…In recent years, many advanced nanostructures have established themselves as fascinating building blocks for optoelectronic applications, with a main focus on versatile photodetection nanoplatforms. [28,34,[163][164][165][166][167][168][169] The representative advanced nanostructures for PEC photodetection are summarized in Table 2.…”

Section: Pec Photodetectionmentioning

confidence: 99%

Recent Progress in Interface Engineering of Nanostructures for Photoelectrochemical Energy Harvesting Applications

et al. 2023

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With rapid and continuous consumption of nonrenewable energy, solar energy can be utilized to meet the energy requirement and mitigate environmental issues in the future. To attain a sustainable society with an energy mix predominately dependent on solar energy, photoelectrochemical (PEC) device, in which semiconductor nanostructure‐based photocatalysts play important roles, is considered to be one of the most promising candidates to realize the sufficient utilization of solar energy in a low‐cost, green, and environmentally friendly manner. Interface engineering of semiconductor nanostructures has been qualified in the efficient improvement of PEC performances including three basic steps, i.e., light absorption, charge transfer/separation, and surface catalytic reaction. In this review, recently developed interface engineering of semiconductor nanostructures for direct and high‐efficiency conversion of sunlight into available forms (e.g., chemical fuels and electric power) are summarized in terms of their atomic constitution and morphology, electronic structure and promising potential for PEC applications. Extensive efforts toward the development of high‐performance PEC applications (e.g., PEC water splitting, PEC photodetection, PEC catalysis, PEC degradation and PEC biosensors) are also presented and appraised. Last but not least, a brief summary and personal insights on the challenges and future directions in the community of next‐generation PEC devices are also provided.

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“…Jiang et al found that the maximum solar-to-hydrogen efficiency is 4.3% for Cu-doped TiO 2 –12CdS NWs photoanode. Recently, Wang et al studied the PEC water splitting enhancement by Au@Pt-modified ZnO-CdS heterojunctions with a photocurrent density as high as 4.23 mA/cm 2 at 1.23 V. However, the influence of plasmonic metal nanoparticles on InGaN-based heterojunction semiconductors for the PEC water splitting was seldom reported. − …”

Section: Introductionmentioning

confidence: 99%

Integration of Ag Plasmonic Metal and WO₃/InGaN Heterostructure for Photoelectrochemical Water Splitting

Devarajulu

Loka

Goddati

et al. 2023

ACS Appl. Mater. Interfaces

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In this study, a Ag/WO 3 /InGaN hybrid heterostructure was successfully developed by sputtering and molecular beam epitaxy techniques, to obtain unique Ag nanospheres adorned with cauliflower-like WO 3 nanostructure over the InGaN nanorods (NRs). Exploiting the localized surface plasmon resonance of Ag, the Ag/WO 3 /InGaN heterostructure exhibited superior photoabsorption ability in the visible region (400−700 nm) of the solar spectrum, with a surface plasmon resonance band centered around 440 nm. Comprehensive analysis through photoluminescence spectroscopy, photocurrent measurements, and electrochemical impedance spectroscopy revealed that the Ag/WO 3 /InGaN hybrid heterostructure significantly enhances the charge carrier separation and transfer kinetics leading to improved overall photoelectrochemical (PEC) performance. The photocurrent density of the Ag/WO 3 /InGaN photoanode is 1.17 mA/cm 2 , which is about 2.72 times higher than that of pure InGaN NRs under visible light irradiation. The photoanode exhibited excellent stability for about 12 h. From the study, it has been found that the maximum applied bias photon-to-current efficiency (ABPE) is ∼1.67% at the applied bias of 0.6 V. The improved PEC water splitting efficiency of the Ag/WO 3 /InGaN photoanode is attributed to the synergistic effects of localized surface plasmon resonance (LSPR), efficient charge carrier separation and transport, and the presence of a Schottky junction. Consequently, the plasmonic metal-assisted heterojunction-based semiconductor Ag/WO 3 /InGaN demonstrates immense potential for practical applications in photoelectrochemical water splitting.

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Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p–n junctions

Cited by 25 publications

References 26 publications

Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors

Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors

Recent Progress in Interface Engineering of Nanostructures for Photoelectrochemical Energy Harvesting Applications

Integration of Ag Plasmonic Metal and WO₃/InGaN Heterostructure for Photoelectrochemical Water Splitting

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Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p–n junctions

Cited by 25 publications

References 26 publications

Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors

Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors

Recent Progress in Interface Engineering of Nanostructures for Photoelectrochemical Energy Harvesting Applications

Integration of Ag Plasmonic Metal and WO3/InGaN Heterostructure for Photoelectrochemical Water Splitting

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Integration of Ag Plasmonic Metal and WO₃/InGaN Heterostructure for Photoelectrochemical Water Splitting