Visible luminescence from silicon by hydrogen implantation and annealing treatments

Pavesi, L.; Giebel, G; Tonini, Rita; Corni, Federico; Nobili, C.; Ottaviani, G.

doi:10.1063/1.112331

Cited by 13 publications

(6 citation statements)

References 12 publications

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“…Several EL spectra were acquired separately to check reproducibility; these were very good. Unlike from the PL results observed by Pavesi et al [6] and Bisero et al [7], the EL is much stronger and can be observed at room temperature. In addition, the EL energy is also higher than that of the PL.…”

Section: Resultscontrasting

confidence: 71%

“…Since the discovery of visible light emission from porous silicon and its attribution to quantum size effects in Si wires, some attempts at production have been made in different ways. Some researches [6,7] employed the implantation of hydrogen or helium to form buried porous silicon, which is more stable than porous silicon fabricated by anodizing [8,9]. Furthermore, all the processes are completely compatible with silicon-based ULSI.…”

Section: Introductionmentioning

confidence: 99%

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Room-temperature electroluminescence from H-plasma-implanted silicon

Liu

Kwok

et al. 2003

Semicond. Sci. Technol.

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We have investigated the electroluminescence (EL) characteristics of hydrogen-plasma-immersion ion-implanted silicon. For the first time, white light was obtained at room temperature from the samples annealing at a temperature of more than 600 • C. We have investigated the current-voltage curves of the device and the relationship between the EL intensity and current density. We analysed the distribution of hydrogen and the microstructure of samples using secondary ion mass spectrometry and transmission electron microscopy. Experimental results show that hydrogen-related complexes and nanocavities in the amorphous layer are not the causes of the emission. The flat cavities with silicon oxide at the surface may be the key to the EL.

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Section: Resultscontrasting

confidence: 71%

Section: Introductionmentioning

confidence: 99%

Room-temperature electroluminescence from H-plasma-implanted silicon

Liu

Kwok

et al. 2003

Semicond. Sci. Technol.

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“…10 It can be explained as follows. For the as-implanted sample, a weak PL band below the silicon band gap peaking at ϳ1.4 m is observed.…”

Section: Resultsmentioning

confidence: 99%

“…7 In this method, a large dose of hydrogen is implanted into silicon to create a buried layer consisting of microcavities or bubbles to facilitate layer transfer. However, the luminescence mechanism in this material is not understood and most of the previous experiments [8][9][10] have focused on the luminescent lines and broad bands below the band gap of silicon. However, the luminescence mechanism in this material is not understood and most of the previous experiments [8][9][10] have focused on the luminescent lines and broad bands below the band gap of silicon.…”

Section: Introductionmentioning

confidence: 99%

“…This hydrogen-implanted region also exhibits interesting optical characteristics and is more stable than traditional porous silicon ͑PS͒ produced by anodic etching. Pavesi et al 10 reported an extremely weak band at about 0.78 m ͑visible region͒, but its origin is still unclear. Pavesi et al 10 reported an extremely weak band at about 0.78 m ͑visible region͒, but its origin is still unclear.…”

Section: Introductionmentioning

confidence: 99%

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Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon

et al. 2004

Journal of Applied Physics

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Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into siliconLow-temperature photoluminescence in the infrared region of hydrogen implanted single crystalline silicon is investigated. Both beam-line ion implantation and plasma immersion ion implantation ͑PIII͒ are used. The beam-line implanted samples show a broad photoluminescence band below the band gap, whereas the PIII implanted samples show at least one more peak at 1.17 eV and a much wider photoluminescence band. The origins are investigated and the peak at 1.17 eV appears to originate from nonphonon emission enhanced by lattice disorder. Our results suggest that PIII may be a better technique than beam-line ion implantation in introducing a certain disorder into the silicon lattice to circumvent the conservation of quasimomentum and consequently enhance the light emission efficiency from the modified Si samples. Our conclusion is further supported by results from plasma implanted porous Si.

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Electroluminescence in plasma ion implanted silicon

Desautels

Bradley

Steenkamp³

et al. 2009

Physica Status Solidi (a)

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Electroluminescent silicon is very desirable for its potential applications in computing and telecommunications. Plasma Ion Implantation (PII) is a means to modify the surface and sub‐surface properties of silicon to produce luminescent centres. Silicon to be treated with PII is immersed in low‐temperature plasma and biased to a high, negative voltage; this accelerates ions into the sample and implants them beneath its surface. The material is subsequently annealed in a furnace and fitted with thin gold and aluminium contacts. Samples of crystalline silicon were implanted with H ions, C ions, and N ions and found to emit visible light when subjected to electric current. Nearly every sample emitted light at ∼460 nm and ∼630 nm; these luminescence bands are commonly observed in X‐ray excited optical luminescence studies of silicon nanostructures and have been attributed to silicon dioxide (SiO2) and the silicon‐SiO2 interface, respectively [1]. Other luminescent bands may be the product of nanostructures and defects created by the implantation process and subsequent annealing. This presentation will explore in detail the results of these experiments and the potential of PII for modifying the luminescent properties of elemental silicon. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Visible luminescence from silicon by hydrogen implantation and annealing treatments

Cited by 13 publications

References 12 publications

Room-temperature electroluminescence from H-plasma-implanted silicon

Room-temperature electroluminescence from H-plasma-implanted silicon

Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon

Electroluminescence in plasma ion implanted silicon

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