Visible Luminescence of Colour Centres in Sapphire

Spriņǵis, M.; Valbis, J. A.

doi:10.1002/pssb.2221230136

Cited by 77 publications

(32 citation statements)

References 15 publications

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“…The presence of these impurities in nominally pure samples is a fairly common feature for Al 2 O 3 . 2,[26][27][28] The luminescence band at 510 nm observed in anion-deficient Al 2 O 3 has been attributed to donor centers like interstitial aluminum ions 29 and this assignment prevailed for long. 5,27 However the authors of Ref.…”

Section: -2mentioning

confidence: 99%

Studies of concentration dependences in the luminescence of Ti-doped Al2O3

Mikhailik

Stefano

Henry

et al. 2011

Journal of Applied Physics

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The variation of luminescence and excitation spectra of titanium doped Al 2 O 3 for the concentration of Ti ranging from 10 to 1000 ppm was investigated using synchrotron radiation. In the lightly doped Al 2 O 3 -Ti (<100 ppm) samples we identified several emission bands. These are the emission of the excitons localized at Ti (290 nm), the emission due to F þ centers (325 nm), the band around 420 nm traditionally attributed to F center emission, and the luminescence of Ti 3þ ions at 720 nm. The emphasis in this study is on the clarification of the nature of the blue emission band in the samples with high concentration of Ti (!100 ppm), where the luminescence and excitation spectra of the blue emission exhibit noticeable variability. This is explained by a model of the luminescence process of Ti 4þ -F centers that includes the photoionization of Ti 3þ , the subsequent capture of electrons at F þ -centers, formation of excited F-centers and, finally, the emission of a blue photon. The quenching of the blue emission with increasing Ti concentration is interpreted in terms of competition between oxygen vacancies and Ti 4þ centers in the capture of the electron.

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Section: -2mentioning

confidence: 99%

Studies of concentration dependences in the luminescence of Ti-doped Al2O3

Mikhailik

Stefano

Henry

et al. 2011

Journal of Applied Physics

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“…Each of these 7 bands was ever on the absorption spectrum of the virgin sample: irradiations do not induce any new absorbing defect in the 250-800 nm range. [36,[40][41][42] In the literature, few information are available concerning the identification of absorbing defects in AlN. The data presented in Table 2 has been performed using those from other materials, in particular from alumina.…”

Section: Thermally Stimulated Luminescencementioning

confidence: 99%

Effect of swift heavy ion irradiations in polycrystalline aluminum nitride

Nappé

Benabdesselam

Grosseau

et al. 2011

Nuclear Instruments and Methods in Physics Research Section B:

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Thanks to its high thermal conductivity, aluminum nitride may be a serious candidate as fuel coating for the Gas Fast Reactor. However, its behavior under irradiation is not entirely well understood. In order to catch a glimpse of this behavior, specimens were irradiated with swift heavy ions of different energies then characterised by both thermally stimulated luminescence and optical absorption spectrophotometry. With these techniques, the native defects, as well as those affected by irradiation, were identified: thus, by comparison to the virgin sample, no new defect detectable by these techniques is created by irradiations. Eventually, the fact that these techniques complement each other allowed to understand the effect of irradiation parameters on the defect concentration.

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“…In spectra CL characteristic strips connected with dot defects in sapphire crystals are observed some: a strip with a maximum 3.67 eV connected with a F-centre luminescence in sapphire (vacancy of oxygen with one electron) [5]; a strip with a maximum of intensity 3.1 eV, corresponding to a luminescence R-the centers (anion-action vacancies steams) [6]; a strip with a maximum 2.4 eV connected with steams anion the vacancies which have grasped electrons (the modular centers of F-type) [7]; and a strip with a maximum 1.8 eV, corresponding to luminescence Ti 3+ . The maintenance of impurity Ti in initial ceramics as has shown method EPМА is less than 0.00 %wt.…”

Section: Cathodoluminescence and Epmamentioning

confidence: 99%