Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Chen, Kunji; Huang, Xinfan; Xu, Jun; Ding, Feng

doi:10.1063/1.108309

Cited by 131 publications

(55 citation statements)

References 14 publications

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“…Chen et al 22 grew a-Si:H/a-SiN x :H multilayers using plasma-enhanced chemical-vapor deposition ͑PECVD͒, which they annealed with a cw Ar ϩ laser. Raman scattering and x-ray diffraction were used to show that the typical crystallite size was roughly equal to the layer thickness of ϳ3.5 nm.…”

Section: Thin Silicon Layersmentioning

confidence: 99%

Photoluminescence properties of silicon quantum-well layers

Saeta

Gallagher

1997

Phys. Rev. B

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Nanometer-scale crystal silicon films surrounded by SiO 2 were prepared by oxidizing silicon-on-insulator substrates prepared from SIMOX ͑separation by implantation of oxygen͒ and crystallized hydrogenated amorphous silicon films. Average silicon layer thickness was determined from reflection spectra. When sufficiently thin (Ͻ2 nm͒, all layers emitted red photoluminescence under blue and UV cw excitation, with a spectrum that did not depend on the mean layer thickness. The spectrum was roughly Gaussian with a peak energy of 1.65 eV, which is lower than for most porous silicon spectra. The time scale for the luminescence decay was ϳ35 s at room temperature and ϳ54 s at 88 K; the decay was nonexponential and did not exhibit spectral diffusion. Atomic force microscope images of the silicon layers showed that luminescing layers were broken apart into regions ϳ50-100 m in diameter, suggesting that luminescence comes only from regions small enough to have no nonradiative recombination centers in the band gap. These results are inconsistent with a simple quantum-confinement model for luminescence in two-dimensional silicon and suggest the importance of radiation from surface states. ͓S0163-1829͑97͒02704-5͔

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Section: Thin Silicon Layersmentioning

confidence: 99%

Photoluminescence properties of silicon quantum-well layers

Saeta

Gallagher

1997

Phys. Rev. B

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“…Compared with solution based (wet) methods such as electrochemical etching used in PS, this production approach is a good way in avoiding surface contamination and is compatible with the existing VLSI technology. We have reported intensive visible PL from crystallized a-Si : H/a-SiN x : H superlattices [10,11] prepared by this method. In this paper, we report new results on stable and visible EL at room temperature from these samples.…”

Section: Introductionmentioning

confidence: 98%

“…To fabricate nc-Si, we have employed the method of laser induced constrained crystallization [10] of ultrathin a-Si:H sublayers within superlattices (SLs). Compared with solution based (wet) methods such as electrochemical etching used in PS, this production approach is a good way in avoiding surface contamination and is compatible with the existing VLSI technology.…”

Section: Introductionmentioning

confidence: 99%

Stable Electroluminescence and Its Mechanism in Laser Crystallized a-Si:H/a-SiNx:H Superlattices

Wang

Huang

et al. 1998

phys. stat. sol. (a)

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“…The visible luminescence has also been found in other nanoscale silicon-based materials, such as ultrafine silicon particles, 19 crystallized amorphous Si:H/SiN x :H multiquantum-well structures, 20 and the laser-annealed hydrogenated silicon powder produced in plasma-enhanced chemical-vapor deposition processes, 21 which has recently been shown to be crystallized, 22 although their photoluminescence ͑PL͒ dynamics and energetic distribution are very different. This strongly suggests that the visible luminescence is associated with nanosize silicon-based materials, whose structures can be quite different but must possess local ordering domains.…”

mentioning

confidence: 99%

“…This strongly suggests that the visible luminescence is associated with nanosize silicon-based materials, whose structures can be quite different but must possess local ordering domains. [1][2][3][4][5][6][7][8][17][18][19][20][21][22] In this paper, we performed first-principles calculations in order to understand the luminescent mechanism through the study of the atomic and electronic structures of a series of clusters: Si 5 All the ab initio ͑HF/6-31G * and 6-311ϩϩ G **, CIS and MP2/6-31G *) and semiempirical PM3 calculations were carried out with the GAUSSIAN 92 package 23 on the IBM-sp2 computer at the University of Barcelona. All the structures in this study were optimized; i.e., they were relaxed.…”

mentioning

confidence: 99%

Role of structural saturation and geometry in the luminescence of silicon-based nanostructured materials

1996

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The structural saturation and stability, the energy gap, and the density of states of a series of small, siliconbased clusters have been studied by means of the PM3 and some ab initio ͑HF/6-31G * and 6-311ϩϩG**, CIS/6-31G * and MP2/6-31G*͒ calculations. It is shown that in order to maintain a stable nanometric and tetrahedral silicon crystallite and remove the gap states, the saturation atom or species such as H, F, Cl, OH, O, or N is necessary, and that both the cluster size and the surface species affect the energetic distribution of the density of states. This research suggests that the visible luminescence in the silicon-based nanostructured material essentially arises from the nanometric and crystalline silicon domains but is affected and protected by the surface species, and we have thus linked most of the proposed mechanisms of luminescence for the porous silicon, e.g., the quantum confinement effect due to the cluster size and the effect of Si-based surface complexes.The visible luminescence in porous silicon 1 is widely believed to arise from nanometric and crystalline silicon domains which show a quantum confinement effect. 1-5 However, other studies support different mechanisms of luminescence: several experimental and theoretical papers claimed 6-8 that both the quantum confinement and the surface ͑hydrogen saturation͒ effects are responsible; Brandt et al. 9 suggested that it may be attributable to a Si-backbone polymer, such as Si 6 O 3 H 6 ͑some later studies 10,11 also supported a similar idea͒; Xu, Gal, and Gross 12 assigned luminescence to molecules attached to the Si surface; a few authors attributed it to hydrogen-related surface species such as SiH 2 and polysilanes; 13,14 the formation of amorphous silicon has also been considered as a possible luminescent mechanism. 15 Some recent papers 16 -18 are very helpful in understanding the origin of the visible luminescence.The visible luminescence has also been found in other nanoscale silicon-based materials, such as ultrafine silicon particles, 19 crystallized amorphous Si:H/SiN x :H multiquantum-well structures, 20 and the laser-annealed hydrogenated silicon powder produced in plasma-enhanced chemical-vapor deposition processes, 21 which has recently been shown to be crystallized, 22 although their photoluminescence ͑PL͒ dynamics and energetic distribution are very different. This strongly suggests that the visible luminescence is associated with nanosize silicon-based materials, whose structures can be quite different but must possess local ordering domains. [1][2][3][4][5][6][7][8][17][18][19][20][21][22] In this paper, we performed first-principles calculations in order to understand the luminescent mechanism through the study of the atomic and electronic structures of a series of clusters: All the ab initio ͑HF/6-31G * and 6-311ϩϩ G **, CIS and MP2/6-31G *) and semiempirical PM3 calculations were carried out with the GAUSSIAN 92 package 23 on the IBM-sp2 computer at the University of Barcelona. All the structures in this study were optimi...

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Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures

Cited by 131 publications

References 14 publications

Photoluminescence properties of silicon quantum-well layers

Photoluminescence properties of silicon quantum-well layers

Stable Electroluminescence and Its Mechanism in Laser Crystallized a-Si:H/a-SiNx:H Superlattices

Role of structural saturation and geometry in the luminescence of silicon-based nanostructured materials

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