Visible photoluminescence in Si+-implanted thermal oxide films on crystalline Si

Shimizu‐Iwayama, Tsutomu; Nakao, Setsuo; Saitoh, Kazuo

doi:10.1063/1.112852

Cited by 287 publications

(91 citation statements)

References 25 publications

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“…5 Present address: Forschungszentrum Rossendorf eV, Postfach 510119, 01314 Dresden, Germany. obtained in quantized systems [2], where the typical lengths are around a few nanometres. Thus, findin a procedure for the controlled production of semiconductor, particularly silicon, nanostructures remains a key requirement for the development of future optoelectronic and electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Nanopatterning of silicon surfaces by low-energy ion-beam sputtering: dependence on the angle of ion incidence

et al. 2002

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We report on the production of nanoscale patterning on Si substrates by low-energy ion-beam sputtering. The surface morphology and structure of the irradiated surface were studied by atomic force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM). Under ion irradiation at off-normal incidence angle (∼50• ), AFM images show the formation of both nanoripple and sawtooth-like structures for sputtering times longer than 20 min. The latter feature coarsens appreciably after 60 min of sputtering, inducing a large increase in the surface roughness. This behaviour is attributed to the preferential direction determined on the substrate by the ion beam for this incidence angle, leading to shadowing effects among surface features in the sputtering process. Under irradiation at normal incidence, the formation of an hexagonal array of nanodots is induced for irradiation times longer than 2 min. The shape and crystallinity of the nanodots were determined by HRTEM. At this incidence angle, the surface roughness is very low and remains largely unchanged even after 16 h of sputtering. For the two angle conditions studied, the formation of the corresponding surface structures can be understood as the interplay between an instability due to the sputtering yield dependence on the local surface curvature and surface smoothing processes such as surface diffusion.

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Section: Introductionmentioning

confidence: 99%

Nanopatterning of silicon surfaces by low-energy ion-beam sputtering: dependence on the angle of ion incidence

et al. 2002

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“…The visible light emitted from porous silicon, despite the crystalline Si band-gap of 1.1 eV was attributed to the quantum-size effects in the nanometer-sized Si crystallites [1,2]. Also, SITO and SRO show optoelectronic properties as does porous silicon [3]; besides, they are technically compatibles with silicon technology. SITO is obtained by silicon implantation into thermal oxide, while SRO is obtained by a chemical vapour deposition (CVD) technique.…”

Section: Introductionmentioning

confidence: 96%

Silicon excess and thermal annealing effects on the photoluminescence of SiO2 and silicon rich oxide super enriched with siliscon implantation

Berman

Aceves

Gallegos

et al. 2004

phys. stat. sol. (c)

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The off-stoichiometry silicon oxide SiO x (x < 2), known as silicon-rich oxide (SRO), and siliconimplanted thermal silicon oxide (SITO) have shown noticeable photoluminescence (PL) at room temperature. Recently, many efforts to increase the PL in these materials have been made. In our experiments, a considerable increase of the visible emission has been observed when the SRO is super-enriched by silicon implantation. In this experiment, SITO and LPCVD-SRO with different silicon excess, Si implanted and no implanted were studied. Different doses of silicon, and annealing in N 2 at different temperature and times were used. PL response was measured before and after annealing. The emission is explained as the decay between traps in the oxide gap. . Also, some effort to correlate the structural properties and the luminescence of these materials has been made [5,6]. Furthermore, the SRO films have been superenriched with silicon implantation [4] and the luminescent properties have been improved. In this work, SITO films were prepared by silicon thermal oxidation and SRO films were prepared by LPCVD. Some samples were implanted with silicon and subsequent annealing was applied during several time intervals. The PL of all of the samples was measured. The emission was studied as a function of silicon excess and annealing time and temperature. Data analysis was done, and a donor-acceptor electron-decay-like mechanism is used to explain the experimental results.

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“…Strong room-temperature photo-and electroluminescent signals have been observed from Sirelated structures, such as porous Si or Si nanocrystals embedded in SiO 2 . 4,5 These results have opened extremely interesting perspectives for the development of a Si-based optoelectronic technology.…”

Section: Introductionmentioning

confidence: 99%

White luminescence from Si+ and C+ ion-implanted SiO2 films

Pérez-Rodrı́guez

González-Varona

Garrido

et al. 2003

Journal of Applied Physics

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The microstructural and optical analysis of SiO 2 layers emitting white luminescence is reported. These structures have been synthesized by sequential Si ϩ and C ϩ ion implantation and high-temperature annealing. Their white emission results from the presence of up to three bands in the photoluminescence ͑PL͒ spectra, covering the whole visible spectral range. The microstructural characterization reveals the presence of a complex multilayer structure: Si nanocrystals are only observed outside the main C-implanted peak region, with a lower density closer to the surface, being also smaller in size. This lack of uniformity in their density has been related to the inhibiting role of C in their growth dynamics. These nanocrystals are responsible for the band appearing in the red region of the PL spectrum. The analysis of the thermal evolution of the red PL band and its behavior after hydrogenation shows that carbon implantation also prevents the formation of well passivated Si/SiO 2 interfaces. On the other hand, the PL bands appearing at higher energies show the existence of two different characteristics as a function of the implanted dose. For excess atomic concentrations below or equal to 10%, the spectra show a PL band in the blue region. At higher doses, two bands dominate the green-blue spectral region. The evolution of these bands with the implanted dose and annealing time suggests that they are related to the formation of carbon-rich precipitates in the implanted region. Moreover, PL versus depth measurements provide a direct correlation of the green band with the carbon-implanted profile. These PL bands have been assigned to two distinct amorphous phases, with a composition close to elemental graphitic carbon or stoichiometric SiC.

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Visible photoluminescence in Si+-implanted thermal oxide films on crystalline Si

Cited by 287 publications

References 25 publications

Nanopatterning of silicon surfaces by low-energy ion-beam sputtering: dependence on the angle of ion incidence

Nanopatterning of silicon surfaces by low-energy ion-beam sputtering: dependence on the angle of ion incidence

Silicon excess and thermal annealing effects on the photoluminescence of SiO2 and silicon rich oxide super enriched with siliscon implantation

White luminescence from Si+ and C+ ion-implanted SiO2 films

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