Visible to short wavelength infrared In₂Se₃-nanoflake photodetector gated by a ferroelectric polymer

Abstract

Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source-drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 μs). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors.

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

“…A single channel photodetector whose channel is a metal diselenide compound possessed a balanced performance exhibiting faster optical response than disulfide (commonly~100 Hz), but lower responsivity in the visible wavelength. Other exfoliated 2D TMDCs such as WS 2 [121,122], GaSe [123], GaS [124], ReS 2 [115,125], In 2 Se 3 [98,126,127], MoSe 2 [128], GaTe [129] have also been reported in high gain n-channel photodetectors. Mobility of these synthetic materials and the quality of the semiconductor/oxide interface are very important for photodetectors based on the CVD method, while the device fabrication process is almost the same as that on exfoliated films.…”

Material and Device Architecture Engineering Toward High Performance Two-Dimensional (2D) Photodetectors

“…Among promising candidates, ferroelectric is another unique option because of the ultrahigh dielectric constants and nonlinear, hysteretic dielectric response to an electric field [104]. Recently, poly(vinylidene fluoride-trifluoroethylene) (P (VDF-TrFE)) ferroelectric polymer films have been used as the new gate dielectric materials [105] and coated on the top of the semiconductors (MoS 2 ) [106]. As shown in Figure 8a Figure 8c illustrates that the device exhibits a maximum attainable photoresponsivity and high detectivity of 2.2 × 10 12 Jones.…”

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

“…The photoresponse range is visible to 1550 nm [112]. When the channel material is replaced by In 2 Se 3 , the photoresponse time is as fast as 200 µs [113]. To minimize environmental influence on the device performance, the MoS 2 photodetector is encapsulated with atomic layer deposited HfO 2 [114].…”