Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO₂/6H-SiC MOS Capacitors at 700 K

Abstract

Comparison of C-V characteristics and interface trap distribution for 6H-SiC MOS capacitor with AlN and HfO2 as high-k dielectric are presented. It is observed that the transition from accumulation to inversion requires a small change in gate voltage for HfO2 compared to AlN. Furthermore, larger shift in flat band voltage with respect to frequency is observed in case of AlN. A larger change in capacitance with respect to voltage and flat band voltage shift with respect to frequency for AlN indicated a poor choice for MOS capacitor compared to HfO2.