Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Yu, Jia; Zhou, Yuchen; Wang, Xiao; Dodabalapur, Ananth; Lai, Keji

doi:10.1021/acs.nanolett.3c03661

Nano Lett.

2023

DOI: 10.1021/acs.nanolett.3c03661

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Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Jia Yu,

Yuchen Zhou,

Xiao Wang

et al.

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2024

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Cited by 2 publications

References 39 publications

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A Scanning Microwave Impedance Microscopy Study of α‐In₂Se₃ Ferroelectric Semiconductor

Wang,

Chen,

Chen

et al. 2024

Adv Funct Materials

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Van der Waals ferroelectric semiconductors, which encompass both ferroelectricity and semiconductivity, have garnered intensive research interests for developing novel non‐volatile functional devices. Previous studies focus on ferroelectricity characterization and device demonstration, with little attention paid to the fundamental electronic properties of these materials and their functional structures, which are essential for both device design and optimization. In this study, scanning microwave impedance microscopy (sMIM) is utilized to investigate the ferroelectric semiconductor of α‐phase indium selenide (α‐In2Se3) and its synaptic field effect transistors. α‐In2Se3 nanoflakes of varying thicknesses are visualized through capacitive signal detection, whose responses are consistent with finite element simulations manifesting dependence on both flake thickness and its semiconductor property. sMIM spectroscopy performed on α‐In2Se3‐based metal‐oxide‐semiconductor (MOS) structures reveals typical MOS capacitance‐voltage characteristics, with additional hysteresis arising from the ferroelectric switching of α‐In2Se3. The local conductance state changes of synaptic α‐In2Se3 ferroelectric semiconductor transistors (FeSFET) in response to gate voltage stimuli are effectively detected by in situ sMIM, in good agreement with electrical device transport properties. This work deepens the understanding of ferroelectric semiconductor physics toward their practical device application.

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A Scanning Microwave Impedance Microscopy Study of α‐In₂Se₃ Ferroelectric Semiconductor

Wang,

Chen,

Chen

et al. 2024

Adv Funct Materials

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Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-Flight Microwave Impedance Microscopy

Yu,

Zhou,

Wang

et al. 2024

ACS Appl. Electron. Mater.

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The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve steady-state or transient measurements on field-effect transistors. Here, we employed microwave impedance microscopy to carry out position-dependent time-of-flight (TOF) experiments on a-IGZO devices, which offer spatial and temporal information on the underlying transport dynamics. The drift mobility calculated from the delay time between carrier injection and onset of TOF response is 2−3 cm 2 /(V s), consistent with the field-effect mobility from device measurements. The spatiotemporal conductivity data can be nicely fitted to a two-step function, corresponding to two coexisting mechanisms with a typical time scale of milliseconds. The competition between multiple-trap-and-release conduction through band-tail states and hopping conduction through deep trap states is evident from the fitting parameters. The underlying length scale and time scale of charge dynamics in a-IGZO are of fundamental importance for transparent and flexible nanoelectronics and optoelectronics, as well as emerging back-end-of-line applications.

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Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Cited by 2 publications

References 39 publications

A Scanning Microwave Impedance Microscopy Study of α‐In₂Se₃ Ferroelectric Semiconductor

A Scanning Microwave Impedance Microscopy Study of α‐In₂Se₃ Ferroelectric Semiconductor

Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-Flight Microwave Impedance Microscopy

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Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Cited by 2 publications

References 39 publications

A Scanning Microwave Impedance Microscopy Study of α‐In2Se3 Ferroelectric Semiconductor

A Scanning Microwave Impedance Microscopy Study of α‐In2Se3 Ferroelectric Semiconductor

Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-Flight Microwave Impedance Microscopy

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Product

Resources

About

A Scanning Microwave Impedance Microscopy Study of α‐In₂Se₃ Ferroelectric Semiconductor

A Scanning Microwave Impedance Microscopy Study of α‐In₂Se₃ Ferroelectric Semiconductor