Visualizing metal/HfO2/SiO2/Si(001) interface electrostatic barrier heights with ballistic hole emission microscopy

The energetic resolution of Schottky barrier visualization is determined by utilizing differences in interface band structures between the Au/Si(001) and Au/Si(111) non-epitaxial interfaces and parallel momentum conservation of the carriers. The visualization technique is based on ballistic electron emission microscopy and spectroscopy, where tens of thousands of spectra are collected on a grid and then fit to extract a spatially resolved map and histogram of the electrostatic barrier height. A resolution of 10 meV is determined from the minimal splitting and eventual merging of the histograms as the gold thickness decreases for the Au/Si(001) and Au/Si(111) samples. This splitting is below previously measured differences in barrier heights extracted from computational modeling of measured barrier height distributions from other interfaces.

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Determination of the energetic resolution of Schottky barrier visualization via interface band structure and parallel momentum conservation

Rogers

Nolting

Durcan

et al. 2021

AIP Advances

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First-principles study of oxygen vacancy defects in β-quartz SiO₂/Si interfaces

Zheng,

Xu,

Feng

et al. 2024

J. Phys. D: Appl. Phys.

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Understanding the electronic structures of gate oxides in Si-based devices is significant for improving device performance. We investigate the electronic properties of the oxygen vacancy defects in β-quartz SiO2/Si interface structure using first-principles calculations. The results indicate that the constructed (SiO2)4/(Si)4 structure is an indirect-gap semiconductor, with its band edges contributed by Si side and a large band-edge energy difference (> 1.780 eV). Our study reveals that the presence of oxygen vacancy defects reduces the band gap, and VO1 is transformed from indirect into direct band gap. The Si dangling bonds in VO1 cause charge localization around the O vacancy, while the formation of Si-Si bonds in VO2 and VO3 lead to electron delocalization. In the calculationof defect formation energies, we find that VO1 maintains the lowest formation energy across different states, making it more likely to form and structurally stable. Compared to O-rich environments, the formation energy in O-poor environments is overall reduced by approximately 4.5 eV, indicating that oxygen vacancy defects are more likely to form and be controlled under O-poor conditions. Ourstudy emphasizes the importance of interface structure and defect characteristics in semiconductor research, providing insights for the development of Si-based devices.

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Visualizing metal/HfO2/SiO2/Si(001) interface electrostatic barrier heights with ballistic hole emission microscopy

Cited by 2 publications

References 27 publications

Determination of the energetic resolution of Schottky barrier visualization via interface band structure and parallel momentum conservation

Determination of the energetic resolution of Schottky barrier visualization via interface band structure and parallel momentum conservation

First-principles study of oxygen vacancy defects in β-quartz SiO₂/Si interfaces

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Visualizing metal/HfO2/SiO2/Si(001) interface electrostatic barrier heights with ballistic hole emission microscopy

Cited by 2 publications

References 27 publications

Determination of the energetic resolution of Schottky barrier visualization via interface band structure and parallel momentum conservation

Determination of the energetic resolution of Schottky barrier visualization via interface band structure and parallel momentum conservation

First-principles study of oxygen vacancy defects in β-quartz SiO2/Si interfaces

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First-principles study of oxygen vacancy defects in β-quartz SiO₂/Si interfaces