Visualizing the Active Paths in Morphologically Defective Organic Thin‐Film Transistors

Abstract

The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/aelm.202100400.

Optical and electronic properties of different thin-film polymorphs of PDIF-CN2 controlled by zone-casting conditions

“…The larger variations for polymorph A might originate from the higher uncertainty of the number of thermal cracks per ribbon per channel that cannot be fully accounted for by simple optical examination. 35…”

“…The larger variations for polymorph A might originate from the higher uncertainty of the number of thermal cracks per ribbon per channel that cannot be fully accounted for by simple optical examination. 35 Although comparing electron mobilities from non-ideal thin film transistors should be done with caution, a much lower average mobility of polymorph B might be expected based on the twisted molecular packing of polymorph B. A twist angle of around 291 was calculated to represent a minimum molecular orientation for the electron charge-transfer integral of PDIderivatives.…”

“…30,31 Highly aligned thin films of a large number of small molecule semiconductors have been created by zone-casting and characterized mainly in terms of their charge transport properties. 30,[32][33][34][35] Many parameters, such as temperature, solvent, additives, and casting speed can be tuned. [36][37][38] They enable a wide variety of deposition conditions and hence also access to different thin-film polymorphs.…”