VLSI-SoC: Advanced Research for Systems on Chip

doi:10.1007/978-3-642-32770-4

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Cited by 2 publications

(2 citation statements)

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“…In 2005, the conference was organized in Perth, Australia, October [17][18][19]2005. The General Chair was Prof. Adam Osseiran from ECU, Australia.…”

Section: Years 2000'smentioning

confidence: 99%

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VLSI-SoC: An Enduring Tradition

Reis

Glesner

2019

VLSI-SoC: Opportunities and Challenges Beyond the Internet of Things

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VLSI-SoC series of conferences started in 1981 and this chapter presents a little bit of its history. Since the beginning, the conference moves around the world, showing recent works in the field of VLSI and Systems-on-Chip design and design automation. The contents of books related to the set of event editions is in some way a witness of the extraordinary evolution of the field in these almost 4 decades.

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“…In 2005, the conference was organized in Perth, Australia, October [17][18][19]2005. The General Chair was Prof. Adam Osseiran from ECU, Australia.…”

Section: Years 2000'smentioning

confidence: 99%

“…Covers of the VLSI2010 and VLSI2011 books with extended versions of best papers published by Springer Publishers[18,19].…”

mentioning

confidence: 99%

VLSI-SoC: An Enduring Tradition

Reis

Glesner

2019

VLSI-SoC: Opportunities and Challenges Beyond the Internet of Things

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Interface engineering of 9X stacked 3D NAND flash memory using hydrogen post-treatment annealing

Choi¹,

Kim²,

Bang³

et al. 2022

Nanotechnology

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This study investigates the effects of hydrogen post-treatment on 3D NAND flash memory. Hydrogen post-treatment annealing (PTA) is suggested to passivate the defects in the tunneling oxide/poly-Si interface and inside the poly-Si channel. However, excess hydrogen PTA can release hydrogen atoms from the passivated defects, which may degrade device performance. Therefore, it is important to determine the appropriate PTA condition for optimization of the device performance. Three different conditions for hydrogen PTA, namely Reference, H, and H++, are applied to observe the effects on device performance. The activation energy (Ea) of the device parameters was extracted according to the hydrogen PTA condition to analyze theeffects. The extracted Ea is about 74 meV for Reference, 53 meV for H, and 58 meV for H++conditions, with the best performance observed at the H condition. Optimal hydrogen PTAshows the best on-current (51% higher than Reference) and short-term retention (66% suppressed ΔVT than Reference) in 9X stacked 3D NAND flash memory.

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VLSI-SoC: Advanced Research for Systems on Chip

Cited by 2 publications

References 13 publications

VLSI-SoC: An Enduring Tradition

VLSI-SoC: An Enduring Tradition

Interface engineering of 9X stacked 3D NAND flash memory using hydrogen post-treatment annealing

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