2009 International Conference on Field-Programmable Technology 2009
DOI: 10.1109/fpt.2009.5377684
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VMATCH: Using logical variation to counteract physical variation in bottom-up, nanoscale systems

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Cited by 22 publications
(16 citation statements)
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“…In [29], authors have proposed a mapping algorithm to tolerate variation on threshold voltage of devices at crosspoints. However, this technique assume that at least one k × k (k is determined before fabrication) defect-free crossbar block must exist after fabrication.…”
Section: Previous Workmentioning
confidence: 99%
See 1 more Smart Citation
“…In [29], authors have proposed a mapping algorithm to tolerate variation on threshold voltage of devices at crosspoints. However, this technique assume that at least one k × k (k is determined before fabrication) defect-free crossbar block must exist after fabrication.…”
Section: Previous Workmentioning
confidence: 99%
“…Various types of crossbar defects can be modeled as below: In the proposed weighted tripartite graph model, the delay information for resources within the crossbars is obtained during the characterization testing phase for these devices, in the form of a path delay testing procedure. Since crossbars have a regular structure and they are also reprogrammable, a well-organized delay testing technique can be devised for delay variation characterization [29]. This characterization is done such that the delay variation of nanowires, contact, and crosspoints are lumped into delay variation values for individual crosspoints.…”
Section: Multi-output Nano-crossbar Architecture Modelmentioning
confidence: 99%
“…For the bottom-up process, VMATCH [18] is proposed to improve the yield in nano-PLA by improving the timing performance. It identifies the physical gates strength by decreasing order of i ON , through V T measurements, and maps to the high-fanout (logically weak) gates in sequence.…”
Section: Error Detection Correction and Reliabilitymentioning
confidence: 99%
“…A statistical assembly process results in variations in nanowire geometries and features as they are fabricated individually [8]. Also, statistical alignment during assembly causes variations in field-effect regions as well as random variations from crosspoint to crosspoint in programmable diodes [14]. Due to the low controllability of the manufacturing process, the resistance of defectfree nanowires may vary as well as capacitance [15,16].…”
Section: Introductionmentioning
confidence: 99%
“…The approach in [22] uses a common CMOS based FPGA architecture and enhances it for CNFET. In [14], an algorithm for matching fanouts of the nets to tolerate threshold voltage variation in self-assembled nanoPLAs is presented (logic variation tolerance). On-the-fly mapping for variation tolerance during runtime for crossbar nano architectures has been addressed in [23].…”
Section: Introductionmentioning
confidence: 99%