VO2 -Based Selection Device for Passive Resistive Random Access Memory Application

Zhang, Kailiang; Wang, Baolin; Wang, Fang; Han, Yemei; Xiaochuan, Jian; Zhang, Hongzhi; Wong, H.-S. Philip

doi:10.1109/led.2016.2582259

Cited by 29 publications

(20 citation statements)

References 19 publications

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“…[2] Complex class of vanadium oxide spans a broad range of 20 phases. [11][12][13] Apolar TS property in the above papers is desirable as a selector element in crossbar arrays to reduce the sneak-path current (which disrupts stored data). [11][12][13] Apolar TS property in the above papers is desirable as a selector element in crossbar arrays to reduce the sneak-path current (which disrupts stored data).…”

mentioning

confidence: 99%

“…[3] Depending on the stoichiometry, crystal structure, and device structure it has demonstrated bipolar resistive switching (BRS) [4][5][6][7][8][9][10] as well as apolar threshold switching (TS). Crystalline VO 2 (c-VO 2 ) as TS element shows significant OFF-current, [12,13] which defeats its primary purpose as a selector. Crystalline VO 2 (c-VO 2 ) as TS element shows significant OFF-current, [12,13] which defeats its primary purpose as a selector.…”

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confidence: 99%

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In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

Nirantar

Mayes

Rahman

et al. 2019

Adv Elect Materials

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structure due to its ability to be designed in high capacity 3D crossbar arrays. [1] The major disadvantage of 3D crossbars currently is the high-leakage or sneak-path current. [2] Complex class of vanadium oxide spans a broad range of 20 phases. [3] Depending on the stoichiometry, crystal structure, and device structure it has demonstrated bipolar resistive switching (BRS) [4][5][6][7][8][9][10] as well as apolar threshold switching (TS). [11][12][13] Apolar TS property in the above papers is desirable as a selector element in crossbar arrays to reduce the sneak-path current (which disrupts stored data). Crystalline VO 2 (c-VO 2 ) as TS element shows significant OFF-current, [12,13] which defeats its primary purpose as a selector. For this reason, a few recent studies [10,[14][15][16] demonstrated TS based on amorphous vanadium oxide (a-VO x ). However, due to the amorphous nature of the film, devices based on same stoichiometry of vanadium oxide show multifunctional memory behavior, [17] which is not desirable for the practical application. This variability highlights that nanostructural investigations are needed to understand the origins of different memory behaviors, in particular the reasons for observing volatile and apolar TS in a-VO x films for its practical utilization as a selector element. Further, in-depth electrical characterization is required to ascertain the electrical conditions for the occurrence of volatile or non-volatile switching in the single device.Here, we present asymmetric cross-point device (Pt/Ti/a-VO x /Pt) with ≈100 nm a-VO x film as a functional switching layer which shows multifunctional behavior in a single device. We further introduce a fabrication procedure (Section S1, Supporting Information) to incorporate a-VO x in crossbar architecture, which has been found to dissolve in water. We choose amorphous films because crystalline films are porous due to grain boundaries and pin-holes, [11] which is unsuitable for stacked architectures. Through X-ray photoelectron spectroscopy (XPS) we analyze the stoichiometry of as-deposited film which revealed the mixed-phased oxidation, including V 3+ , V 4+ , and V 5+ (corresponding to V 2 O 3 , VO 2 , and V 2 O 5 , respectively).

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In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

Nirantar

Mayes

Rahman

et al. 2019

Adv Elect Materials

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“…Pellegrino et al fabricated the free standing VO 2 /TiO 2 cantilever, exhibiting two types of data retention that is the nonvolatile resistive memory with self‐heating erasing and the volatile memory with current erasing . Additionally, the MIT in VO 2 showing volatile threshold switching behavior can also be used as Mott selectors in the resistive random‐access memory (ReRAM) devices and 3D memory array …”

Section: Electrically Stimulated Devicesmentioning

confidence: 99%

Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications

Wang

Liu

et al. 2018

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The reversible, ultrafast, and multistimuli responsive phase transition of vanadium dioxide (VO ) makes it an intriguing "smart" material. Its crystallographic transition from the monoclinic to tetragonal phases can be triggered by diverse stimuli including optical, thermal, electrical, electrochemical, mechanical, or magnetic perturbations. Consequently, the development of high-performance smart devices based on VO grows rapidly. This review systematically summarizes VO -based emerging technologies by classifying different stimuli (inputs) with their corresponding responses (outputs) including consideration of the mechanisms at play. The potential applications of such devices are vast and include switches, memories, photodetectors, actuators, smart windows, camouflages, passive radiators, resonators, sensors, field effect transistors, magnetic refrigeration, and oscillators. Finally, the challenges of integrating VO into smart devices are discussed and future developments in this area are considered.

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“…The Pt/VO 2 /Pt selector has been integrated with NiO unipolar RRAM by Lee et al [93] in 2007 and ZrO x /HfO x bipolar RRAM by Son et al [94] in 2011. In 2016, 1S-1R configuration of W/VO 2 / Pt selection device and Ti/HfO 2 /Pt RRAM was demonstrated by zhang et al [95]. However, thermal instability is a major challenge with VO 2 for practical applications [13].…”

Section: Other Metal Oxide Memristor-based Synaptic Devicesmentioning

confidence: 99%

Synaptic Behavior in Metal Oxide-Based Memristors

Hu¹,

Wu²,

Li³

2018

Advances in Memristor Neural Networks - Modeling and Applications

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With the end of Moore's law in sight, new computing paradigms are needed to fulfill the increasing demands on data and processing potentials. Inspired by the operation of the human brain, from the dimensionality, energy and underlying functionalities, neuromorphic computing systems that are building upon circuit elements to mimic the neurobiological activities are good concepts to meet the challenge. As an important factor in a neuromorphic computer, electronic synapse has been intensively studied. The utilization of transistors, atomic switches and memristors has been proposed to perform synaptic functions. Memristors, with several unique properties, are exceptional candidates for emulating artificial synapses and thus for building artificial neural networks. In this paper, metal oxide-based memristor synapses are reviewed, from materials, properties, mechanisms, to architecture. The synaptic plasticity and learning rules are described. The electrical switching characteristics of a variety of metal oxide-based memristors are discussed, with a focus on their application as biological synapses.

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VO2 -Based Selection Device for Passive Resistive Random Access Memory Application

Cited by 29 publications

References 19 publications

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications

Synaptic Behavior in Metal Oxide-Based Memristors

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VO2 -Based Selection Device for Passive Resistive Random Access Memory Application

Cited by 29 publications

References 19 publications

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VOx Asymmetric Crossbars

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VOx Asymmetric Crossbars

Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications

Synaptic Behavior in Metal Oxide-Based Memristors

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In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars