1994
DOI: 10.1016/0022-3115(94)91062-6
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Void growth and thermal desorption of deuterium from voids in tungsten

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Cited by 114 publications
(93 citation statements)
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“…Exposure conditions for each exposure of each sample are summarized in table 1. The temperature during exposure ensured that vacancies were not mobile (in W, vacancies become mobile at 550-600 K [7,8]). …”
Section: Methodsmentioning
confidence: 99%
“…Exposure conditions for each exposure of each sample are summarized in table 1. The temperature during exposure ensured that vacancies were not mobile (in W, vacancies become mobile at 550-600 K [7,8]). …”
Section: Methodsmentioning
confidence: 99%
“…Due to the small difference in the trapping energy of a deuterium atom trapped in a vacancy and the trapping energy of deuterium molecules in microvoids or microcavities [13][14][15][16], it may be difficult to resolve these two trap sites experimentally. On the other hand, TDS measurements influence the initial D distribution by annealing.…”
Section: Modelingmentioning
confidence: 99%
“…Moreover, calculations with only intrinsic defects do not describe the experimental depth profiles at all as one can see from Thus, the density of voids is less than vacancies. Since, at such a low temperature as 400 K the vacancies in W are still immobile [13], the formation of voids at 400 K is due to the stress field induced by energetic ions. This means that the stress-induced field results in an agglomeration of vacancies in voids and a production of dislocations during implantation even at such a low temperature as 400 K. The reduction of the bubble density with increasing ion energy was also observed by Sakamoto et al [24].…”
Section: Peculiarity At Low-energy Implantation: Nature Of Low-energymentioning
confidence: 99%
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“…H retention is expressed in surface modification, formation of subsurface blisters and accumulation of H in the bulk material. These effects are attributed to trapping of H atoms on lattice defects such as vacancies, dislocations/grain boundaries and voids [2][3][4]. Typical kinetic energy of H ions coming from plasma (below 500 eV ) is far below the threshold energy needed to create a stable Frenkel-pair defect in W, and the implantation range of H ions is limited to several nanometers [5].…”
Section: Introductionmentioning
confidence: 99%