2006
DOI: 10.1103/physrevb.74.024108
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Void lattice formation as a nonequilibrium phase transition

Abstract: The evolution of a void ensemble in the presence of one-dimensionally migrating self-interstitials is considered, consistently taking into account the nucleation of voids via the stochastic accumulation of vacancies. Including the stochastic fluctuations of the fluxes of mobile defects caused by the random nature of diffusion jumps and cascade initiation, the evolution of the void ensemble is treated using the Fokker-Planck equation approach. A system instability signaling a nonequilibrium phase transition is … Show more

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Cited by 29 publications
(55 citation statements)
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“…equation system (1) in [31] with equations (5) and (6) in [18]). Another attempt was made by Semenov and Woo [32,33]. Their analysis was based on the assumption of the existence of the stationary size-distribution function of voids.…”
Section: Introductionmentioning
confidence: 99%
“…equation system (1) in [31] with equations (5) and (6) in [18]). Another attempt was made by Semenov and Woo [32,33]. Their analysis was based on the assumption of the existence of the stationary size-distribution function of voids.…”
Section: Introductionmentioning
confidence: 99%
“…The interesting case occurs when the 1-D SIA component is small but non-negligible, and the void sink strength k 2 c is much larger than the dislocation density ρ, e.g., ρ/k 2 c ∼ 10 −2 . As pointed out in [14], void growth tends to saturate under such circumstances, and a random void distribution may become unstable. Indeed, in this case, a small 1-D SIA fraction of only 10 −2 is still sufficiently large to induce a phase transition to form a void lattice.…”
Section: Void-growth Saturation Due To 1-d Siasmentioning
confidence: 96%
“…Hence, the influx of SIAs into the voids increases faster than the vacancy influx when a critical void size is exceeded. With increasing void size the net vacancy influx decreases monotonically to zero, with the void radius finally saturating at a stationary value determined by the absorption cross section of dislocations for 1-D SIAs [4,14,15]. Further void growth gives rise to an increase of the interstitial absorption rate at the voids at the expense of the interstitial absorption at dislocations.…”
Section: Void-growth Saturation Due To 1-d Siasmentioning
confidence: 97%
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“…The activation energy for the 1D glide motion, EMD, was evaluated to be less than 0.1 eV, [5][6][7][8][9] which meant that the 1D diffusion was an extremely fast process. This phenomenon is believed to play key roles in the degradation processes of radiation-resistant materials used in nuclear-fission and fusion devices; [10][11][12] therefore, it has also been theoretically [13][14][15] and experimentally [16][17][18][19][20][21][22] studied.…”
Section: Introductionmentioning
confidence: 99%