Volatile component loss and contact resistance of metals on GaAs and GaP during annealing

Mojzes, I.; Sebestyen, T.; Szigethy, D.

doi:10.1016/0038-1101(82)90158-7

Cited by 58 publications

(8 citation statements)

References 32 publications

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“…• C for 3 min, where Ni/AuGe/Ge is used for the nside and Ni/Zn/Au for the p-side [14][15][16]. Each piece of the wafer contains between 20 and 25 mesas of each size.…”

Section: Sample Preparationmentioning

confidence: 99%

“…The processing of the devices for the DLTS experiments involves standard optical lithography and dry etching techniques, yielding round mesa structures of 200 or 400

normalμ

m radius. The contacts are evaporated thermally and annealed at 400

^{\circ}

C for 3 min, where Ni/AuGe/Ge is used for the n ‐side and Ni/Zn/Au for the p ‐side . Each piece of the wafer contains between 20 and 25 mesas of each size.…”

Section: Sample Preparationmentioning

confidence: 99%

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Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

Bonato

Arikan

Desplanque

et al. 2016

Physica Status Solidi (b)

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Self‐organized GaSb quantum dots are embedded in GaP by molecular beam epitaxy and n+p‐diodes are fabricated. The structure of the sample is investigated using transmission electron microscopy with atomic resolution. The presence of quantum dots on top of a wetting layer and interdiffusion processes between Sb and P are observed. The localization energy, capture cross‐section, and storage time of holes in the ground state of the quantum dots are determined via deep‐level transient spectroscopy. Their localization energy of 1.18false(±0.01false)eV is found to agree with the theoretical prediction of 1.4 eV once the observed interdiffusion is taken into account. A storage time of holes of 3.9false(±0.3false) days at room temperature is calculated, marking an improvement of 3 orders of magnitude from previous record figures. GaSb/GaP quantum dots are, thus, promising candidates for future non‐volatile DRAMs or fast Flash. Schematic representation of the quantum dots (left) and of the valence band in their vicinity (right). The localization energy is marked on the scheme. The localization of the quantum dots prevents thermal emission of holes, generating a storage time at room temperature of 3.9 days.

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“…• C for 3 min, where Ni/AuGe/Ge is used for the nside and Ni/Zn/Au for the p-side [14][15][16]. Each piece of the wafer contains between 20 and 25 mesas of each size.…”

Section: Sample Preparationmentioning

confidence: 99%

“…The processing of the devices for the DLTS experiments involves standard optical lithography and dry etching techniques, yielding round mesa structures of 200 or 400

normalμ

m radius. The contacts are evaporated thermally and annealed at 400

^{\circ}

C for 3 min, where Ni/AuGe/Ge is used for the n ‐side and Ni/Zn/Au for the p ‐side . Each piece of the wafer contains between 20 and 25 mesas of each size.…”

Section: Sample Preparationmentioning

confidence: 99%

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

Bonato

Arikan

Desplanque

et al. 2016

Physica Status Solidi (b)

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“…The contacts are evaporated thermally and annealed at 400 C for 3 min, where Ni/AuGe/ Ge is used for the n-side and Ni/Zn/Au for the p-side. [16][17][18] The samples are characterized with both conventional 12 and charge-selective DLTS. 6,19 The bias voltage range in which charging and discharging of the QDs occur is determined first by means of capacitance-voltage (C-V) spectroscopy.…”

mentioning

confidence: 99%

230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

Bonato

Sala

Stracke

et al. 2015

Applied Physics Letters

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A GaP n+p-diode containing In0.5Ga0.5As quantum dots (QDs) and an AlP barrier is characterized electrically, together with two reference samples: a simple n+p-diode and an n+p-diode with AlP barrier. Localization energy, capture cross-section, and storage time for holes in the QDs are determined using deep-level transient spectroscopy. The localization energy is 1.14(±0.04) eV, yielding a storage time at room temperature of 230(±60) s, which marks an improvement of 2 orders of magnitude compared to the former record value in QDs. Alternative material systems are proposed for still higher localization energies and longer storage times.

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“…It is well documented that Ga migrates into Au at temperatures above 400 °C (see, for example, ref and references therein). Decomposition of the reacted volume of GaAs releases As, which diffuses through a polycrystalline Au–Ga layer and re-evaporates . The rate of this process can be controlled, for example, by tuning the As 2 pressure in the chamber or using encapsulating layers …”

Section: Discussionmentioning

confidence: 99%

Ga₂Se₃ Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs

et al. 2020

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Out-of-plane Ga2Se3 nanowires are grown by molecular beam epitaxy via Au-assisted heterovalent exchange reaction on GaAs substrates in the absence of Ga deposition. It is shown that at a suitable temperature around 560 °C the Au-decorated GaAs substrate releases Ga atoms, which react with the incoming Se and feed the nanowire growth. The nanowire composition, crystal structure, and morphology are characterized by Raman spectroscopy and electron microscopy. The growth mechanism is investigated by X-ray photoelectron spectroscopy. We explore the growth parameter window and find an interesting effect of shortening of the nanowires after a certain maximum length. The nanowire growth is described within a diffusion transport model, which explains the nonmonotonic behavior of the nanowire length versus the growth parameters. Nanowire shortening is explained by the blocking of Ga supply from the GaAs substrate by thick, in-plane worm-like Ga2Se3 structures, which grow concomitantly with the nanowires, followed by backward diffusion of Ga atoms from the nanowires down to the substrate surface.

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Volatile component loss and contact resistance of metals on GaAs and GaP during annealing

Cited by 58 publications

References 32 publications

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

Ga₂Se₃ Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs

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Volatile component loss and contact resistance of metals on GaAs and GaP during annealing

Cited by 58 publications

References 32 publications

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs

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Ga₂Se₃ Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs