Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects

Jeon, Yu-Rim; Akinwande, Deji; Choi, Changhwan

doi:10.1039/d3nh00571b

Nanoscale Horiz.

2024

DOI: 10.1039/d3nh00571b

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Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects

Yu-Rim Jeon,

Deji Akinwande,

Changhwan Choi

Abstract: We investigated diffusion memristors in the structure of Ag/Ta2O5/HfO2/Pt where, active Ag ions from control active metal ion diffusion and mimic biological brain functions. The CMOS compatible high-k metal oxide...

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Cited by 4 publications

References 69 publications

(85 reference statements)

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Enhanced Synaptic Memory Window and Linearity in Planar In₂Se₃ Ferroelectric Junctions

Jeon,

Kim,

Biswas

et al. 2024

Advanced Materials

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A synaptic memristor using 2D ferroelectric junctions is a promising candidate for future neuromorphic computing with ultra‐low power consumption, parallel computing, and adaptive scalable computing technologies. However, its utilization is restricted due to the limited operational voltage memory window and low on/off current (ION/OFF) ratio of the memristor devices. Here, it is demonstrated that synaptic operations of 2D In2Se3 ferroelectric junctions in a planar memristor architecture can reach a voltage memory window as high as 16 V (±8 V) and ION/OFF ratio of 108, significantly higher than the current literature values. The power consumption is 10−5 W at the on state, demonstrating low power usage while maintaining a large ION/OFF ratio of 108 compared to other ferroelectric devices. Moreover, the developed ferroelectric junction mimicked synaptic plasticity through pulses in the pre‐synapse. The nonlinearity factors are obtained 1.25 for LTP, −0.25 for LTD, respectively. The single‐layer perceptron (SLP) and convolutional neural network (CNN) on‐chip training results in an accuracy of up to 90%, compared to the 91% in an ideal synapse device. Furthermore, the incorporation of a 3 nm thick SiO2 interface between the α‐In2Se3 and the Au electrode resulted in ultrahigh performance among other 2D ferroelectric junction devices to date.

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Enhanced Synaptic Memory Window and Linearity in Planar In₂Se₃ Ferroelectric Junctions

Jeon,

Kim,

Biswas

et al. 2024

Advanced Materials

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Effects of Ag nano-islands and Al2O3 layer on the performance of HfO2-Based threshold switching devices

Jiang,

Zhang,

Wang

et al. 2025

Materials Science in Semiconductor Processing

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Memristive Ion Dynamics to Enable Biorealistic Computing

Zhao,

Kim,

et al. 2024

Chem. Rev.

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Conventional artificial intelligence (AI) systems are facing bottlenecks due to the fundamental mismatches between AI models, which rely on parallel, in-memory, and dynamic computation, and traditional transistors, which have been designed and optimized for sequential logic operations. This calls for the development of novel computing units beyond transistors. Inspired by the high efficiency and adaptability of biological neural networks, computing systems mimicking the capabilities of biological structures are gaining more attention. Ion-based memristive devices (IMDs), owing to the intrinsic functional similarities to their biological counterparts, hold significant promise for implementing emerging neuromorphic learning and computing algorithms. In this article, we review the fundamental mechanisms of IMDs based on ion drift and diffusion to elucidate the origins of their diverse dynamics. We then examine how these mechanisms operate within different materials to enable IMDs with various types of switching behaviors, leading to a wide range of applications, from emulating biological components to realizing specialized computing requirements. Furthermore, we explore the potential for IMDs to be modified and tuned to achieve customized dynamics, which positions them as one of the most promising hardware candidates for executing bioinspired algorithms with unique specifications. Finally, we identify the challenges currently facing IMDs that hinder their widespread usage and highlight emerging research directions that could significantly benefit from incorporating IMDs.

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Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects

Abstract: We investigated diffusion memristors in the structure of Ag/Ta2O5/HfO2/Pt where, active Ag ions from control active metal ion diffusion and mimic biological brain functions. The CMOS compatible high-k metal oxide...

Cited by 4 publications

References 69 publications

Enhanced Synaptic Memory Window and Linearity in Planar In₂Se₃ Ferroelectric Junctions

Enhanced Synaptic Memory Window and Linearity in Planar In₂Se₃ Ferroelectric Junctions

Effects of Ag nano-islands and Al2O3 layer on the performance of HfO2-Based threshold switching devices

Memristive Ion Dynamics to Enable Biorealistic Computing

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Resources

About

Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects

Abstract: We investigated diffusion memristors in the structure of Ag/Ta2O5/HfO2/Pt where, active Ag ions from control active metal ion diffusion and mimic biological brain functions. The CMOS compatible high-k metal oxide...

Cited by 4 publications

References 69 publications

Enhanced Synaptic Memory Window and Linearity in Planar In2Se3 Ferroelectric Junctions

Enhanced Synaptic Memory Window and Linearity in Planar In2Se3 Ferroelectric Junctions

Effects of Ag nano-islands and Al2O3 layer on the performance of HfO2-Based threshold switching devices

Memristive Ion Dynamics to Enable Biorealistic Computing

Contact Info

Product

Resources

About

Enhanced Synaptic Memory Window and Linearity in Planar In₂Se₃ Ferroelectric Junctions

Enhanced Synaptic Memory Window and Linearity in Planar In₂Se₃ Ferroelectric Junctions