Voltage control of magnetic domain wall injection into strain-mediated multiferroic heterostructures

Zhou, Huaiying; Shi, Shengbin; Nian, Diqing; Cui, Shuting; Luo, Jing; Qiu, Yang; Yang, Han; Zhu, Mingmin; Yu, Guoliang

doi:10.1039/d0nr02595j

Cited by 16 publications

(6 citation statements)

References 45 publications

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“…In recent years, different topological magnetic structures such as domain walls [1][2][3], skyrmions [4][5][6][7], merons [8,9], bubbles [10], and vortexes [11,12] have been discovered in ferromagnetic thin-films. The emergence of these topological solitons is particularly important for the development of magnetic storage and spintronic devices [13][14][15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Dynamic behavior of skyrmion collision: spiral and breath

Shi,

Zhao,

Sun

et al. 2023

New J. Phys.

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A magnetic skyrmion is a particle-like topological soliton, which is an ideal candidate for developing high-density storage and logic devices due to its nonvolatility and tunability. In view of the particle motion characteristics of skyrmion, different skyrmions in a material inevitably interact in the form of short-range repulsion and long-range attraction. In this work, the dynamic characteristics of skyrmion collision in a ferromagnetic Co thin film are investigated by using micromagnetic simulations. It is found that the dynamic behavior of skyrmion after collision is highly dependent on the size of the strip, the initial velocity of skyrmion and magnetic damping constant. For the collision of two skyrmions, when the strip width exceeds the critical value, the skyrmions form a pair and rotate counterclockwise in the form of spiral and breath. It is interesting that the rotation and breath of skyrmions keep the same periodicity under the negligible damping, and the frequency increases with the increase of the initial velocity of skyrmion. Further, the collision of a system of three skyrmions reveals that they interact in pairs to form closed periodic trajectories. The results of the present work not only give an insight into the multi-skyrmion dynamics, but also provide guidance for the development of spintronic devices based on multi-skyrmion motion.

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Section: Introductionmentioning

confidence: 99%

Dynamic behavior of skyrmion collision: spiral and breath

Shi,

Zhao,

Sun

et al. 2023

New J. Phys.

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“…Installation of more than one access ports for the RM ensures multiple read and write operations simultaneously, which can increase the operational speed significantly at the cost of the increased complexity of read/write circuits. Recently, a voltage-controlled DW writing (injection) technique is also been investigated for strain-mediated multiferroic heterostructures with good write speed ( ∼ 3.4 ns) and ultra-low energy consumption per write ( ∼ 52.48 mJ∕m 2 ) [242]. The main feature of CIDWM is the movement of DW along the direction of electron flow, which is opposite to the flow of current.…”

Section: Magnetic Domain Wall Nanowirementioning

confidence: 99%

Spintronic devices: a promising alternative to CMOS devices

2021

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The field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggressive research activities to employ spintronic devices in memory units and also revamped the concept of processing-in-memory architecture for the future. This review article explores the essential milestones in the evolutionary field of spintronics. It includes various physical phenomena such as the giant magnetoresistance effect, tunnel magnetoresistance effect, spin-transfer torque, spin Hall effect, voltage-controlled magnetic anisotropy effect, and current-induced domain wall/skyrmions motion. Further, various spintronic devices such as spin valves, magnetic tunnel junctions, domain wall-based race track memory, all spin logic devices, and recently buzzing skyrmions and hybrid magnetic/silicon-based devices are discussed. A detailed description of various switching mechanisms to write the information in these spintronic devices is also reviewed. An overview of hybrid magnetic /silicon-based devices that have the capability to be used for processing-in-memory (logic-in-memory) architecture in the immediate future is described in the end. In this article, we have attempted to introduce a brief history, current status, and future prospectus of the spintronics field for a novice.

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“…Recently, the strain-mediated magnetoelectric coupling mechanism has been predicted to control the magnetization via a magnetostrictive effect in multiferroic heterostructures, which extends the potential for the manipulation of the magnetization dynamics in spintronic devices [25][26][27]. This strainmediated approach has been regarded as an alternative technique for controlling the magnetization at the nanoscale in an energy-efficient way [28,29].…”

Section: Introductionmentioning

confidence: 99%

Micromagnetic prediction strain and current co-mediated spindynamics in skyrmion-based spin-torque nano-oscillator

Cui¹,

Zhu²,

Qiu³

et al. 2022

J. Phys. D: Appl. Phys.

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In this article, we theoretically investigate the influence of strain on the oscillation frequency characteristics of a skyrmion-based spin-torque nano-oscillator (STNO) using micromagnetic simulations. The system consists of an ultrathin nanopillar magnetic film with interfacial Dzyaloshinskii–Moriya interactions and a ring-shaped region to offer a tunable spatial strain source. The applied strain gives rise to an extra effective field in the magnetic film through magnetoelastic coupling and forms a strong confined potential for skyrmion dynamics. Our simulation results show that the operation frequency of the STNO can be effectively modulated by the strain. Furthermore, we introduce a simplified analytical expression of the skyrmion gyration dynamics to explain the micromagnetic simulation results. Our results will be useful in the development of wide-range frequency-tunable microwave emitters and frequency-shift keying for wireless communication.

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Voltage control of magnetic domain wall injection into strain-mediated multiferroic heterostructures

Abstract: Schematic illustration of strain-mediated magnetization precessional switching and a domain wall injection mechanism in a nano-magnet with in-plane shape anisotropy.

Cited by 16 publications

References 45 publications

Dynamic behavior of skyrmion collision: spiral and breath

Dynamic behavior of skyrmion collision: spiral and breath

Spintronic devices: a promising alternative to CMOS devices

Micromagnetic prediction strain and current co-mediated spindynamics in skyrmion-based spin-torque nano-oscillator

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