2005
DOI: 10.1103/physrevlett.94.197402
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Voltage Control of the Spin Dynamics of an Exciton in a Semiconductor Quantum Dot

Abstract: We report the observation of a spin-flip process in a quantum dot whereby a dark exciton with total angular momentum L = 2 becomes a bright exciton with L = 1. The spin-flip process is revealed in the decay dynamics following nongeminate excitation. We are able to control the spin-flip rate by more than an order of magnitude simply with a dc voltage. The spin-flip mechanism involves a spin exchange with the Fermi sea in the back contact of our device and corresponds to the high temperature Kondo regime. We use… Show more

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Cited by 164 publications
(153 citation statements)
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“…We then set the gate voltage to where the co-tunneling induced spin flip process is suppressed [19]. Figure 2(a) shows a single beam absorption spectrum by scanning the laser across transition H1 at a magnetic field of .…”
mentioning
confidence: 99%
“…We then set the gate voltage to where the co-tunneling induced spin flip process is suppressed [19]. Figure 2(a) shows a single beam absorption spectrum by scanning the laser across transition H1 at a magnetic field of .…”
mentioning
confidence: 99%
“…This is an upper bound for the corresponding DNSP decay rate which will be slowed by additional effects like the inhomogeneous Knight field the nuclei are exposed to. Secondly, the spin of the residual electron is randomized due to co-tunnelling to the close-by electron reservoir on a timescale of τ el ∼ 20 ns [17]. This electron spin depolarization is then mapped onto the nuclear spin system via hyperfine flip-flop events.…”
mentioning
confidence: 99%
“…12 In our device a n-type back contact is separated from annealed InGaAs/ GaAs dots by a 25 nm GaAs barrier. A capping layer of either 30 nm ͑sample A͒ or 10 nm ͑sample B͒ separates the dots from an AlAs/ GaAs blocking barrier ͑Fig.…”
mentioning
confidence: 99%
“…A dc bias between a NiCr Schottky gate on the device surface and the back contact allows for controlled tunneling of electrons into the dots on time scales of ϳ10 ps. 12 PL is detected using a low temperature microscope at 5 K. Excitation is provided by a nonresonant, 1.50 eV ͑826 nm͒, pulsed laser at 20 MHz with a measured full width at half maximum of ϳ50 ps. Excitation power is adjusted through the use of optical attenuators in order to preserve the temporal properties of the laser.…”
mentioning
confidence: 99%
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