Voltage controlled electron spin dynamics in resonant tunnelling devices

Galeti, H. V. A.; Brasil, M. J. S. P.; Gobato, Y Galv ao; Henini, M.

doi:10.1088/0022-3727/47/16/165102

Cited by 1 publication

(2 citation statements)

References 30 publications

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“…1,2 Particularly, it was shown that the spin-polarization of carriers in Resonant Tunneling Diodes (RTDs) can be voltage-selected, which makes these devices very attractive for spintronic applications. [3][4][5][6][7][8][9][10][11][12][13][14][15] The successful operation of semi-magnetic RTDs as a voltage-controlled electron-spinpolarized filter was first reported for structures based in II-VI semiconductor alloys with a magnetic ion. 4 Spin effects in III-V non-magnetic RTDs under high magnetic was previously investigated.…”

Section: Introductionmentioning

confidence: 99%

“…4 Spin effects in III-V non-magnetic RTDs under high magnetic was previously investigated. [5][6][7][8][9][10][11][12][13][14][15] It has been demonstrated that both the excitonic spin-splitting energy and the polarization degree of the quantum well (QW) emission from p-i-p non-magnetic RTDs under high magnetic fields present strong oscillations near resonant peak voltages. In addition, the spin-splitting and circular polarization degree did not present a clear correlation, which implies that the spin polarization of carriers in the QW cannot be explained by a simple thermal occupation of the QW confined levels.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

Awan

Galeti

Gobato

et al. 2014

Journal of Applied Physics

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Light controlled spin polarization in asymmetric n -type resonant tunneling diode Appl. Phys. Lett. 91, 073520 (2007);In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by $20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of $À75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators. V C 2014 AIP Publishing LLC. [http://dx.

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