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Овчинников, И. В.; Wang, Kang L.

doi:10.1103/physrevb.78.012405

Cited by 15 publications

(14 citation statements)

References 16 publications

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“…A theoretical study of the effect of surface charge on the Curie temperature of ultrathin metallic films has been reported recently [124]. It was also predicted that it may be possible to induce a paramagnetic to FM phase transition at a metal surface (interface) by an applied electric field [125,126]. Very recently, it was demonstrated experimentally that by applying an electric field of approximately 10 MV cm −1 to a scanning tunnelling microscope (STM) tip above the Fe (001) surface 10 nm Fe islands can be switched from an AFM fcc to an FM bcc structure [127].…”

Section: (A) Interface Magnetizationmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

209

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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Section: (A) Interface Magnetizationmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

209

144

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“…Recently it was demonstrated that ME effect can be induced by free carriers 6 . In this case, due to spin-dependent screening 7 , an applied electric field produces an accumulation of spin-polarized electrons or holes at the metal-insulator interface resulting in a change of the interface magnetization 8 and the exchange splitting [9][10][11] .…”

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confidence: 99%

Large magnetoelectric effect in ferroelectric/piezomagnetic heterostructures

2011

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We present results of the first principles calculations on the large magnetoelectric effect in ferroelectric/piezomagnetic multilayers. We consider thin film layered heterostructure of typical ferroelectric, such as PbTiO3, with piezomagnetic (PzM) Mn-based antiperovskite, such as Mn3GaN. The atomic displacements induced by the FE polarization as well as mechanical stress at the interface break the triangular magnetic symmetry of the PzM phase producing net magnetization in the system. Induced magnetization can be controlled by changing the direction of polarization in ferroelectric phase. Our calculations show that reversal of the polarization results in change of the net magnetization in the system by more than 50%.

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“…In this Rapid Communication we show that both arguments are actually misconceptions and a similar effect must exist in metals as recently predicted in Ref. 5. Its physical picture, however, is in a sense opposite of the conventional interpretation.…”

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confidence: 71%

Theory of electric-field-controlled surface ferromagnetic transition in metals

Овчинников

Wang

2009

Phys. Rev. B

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It is widely believed that in metals, unlike in the dilute magnetic semiconductors, the control of ferromagnetic ordering by external voltage is hardly achievable. We compare the two types of ferromagnets and show that there is no obvious reason why metals are less preferable for this phenomenon. A similar effect in metals, however, has a different physical picture and should be identified as a voltage-induced surface transition. We study its properties within the theory of the surface critical phenomena and discuss possible difficulties on the way to its experimental realization.The possibility to externally control ferromagnetic ordering will naturally render an entire additional degree of freedom to the functionality of the magnetoelectronics and spintronics devices. 1 Of primary importance is the capacitive manipulation of ferromagnetism. The voltage-controlled ferromagnetic ordering ͑VCFO͒ was demonstrated not long ago 2 in the dilute magnetic semiconductors ͑DMS͒. 3 The phenomenon was recognized as a controllable variation in the local ͑bulk͒ Curie temperature, T C b , in the surface layer, which the electric field penetrates varying the free-carrier concentration, , and consequently the free-carrier-mediated exchange coupling between the localized spins. For reasonable voltages, the available variation in and/or T C ͑Ref. 4͒ is minor, thus making it imperative that the operation temperature of the device, T 0 , be sufficiently close to the transition point,The recent challenge for the technological applications of the VCFO in DMS is that T C , and consequently T 0 , is much lower than the room temperature, T R .One of the possible ways to achieve the room-temperature VCFO is to switch to the high-T C metallic ferromagnets. The conventional wisdom, however, puts forward the two following widely accepted arguments against the possibility of the VCFO in metals: ͑i͒ due to the high the voltage-induced variation in T C is inconsiderable in metals; ͑ii͒ in metals, the injected carriers occupy only an atomic-size surface layer and so should the voltage-induced magnetization. In this Rapid Communication we show that both arguments are actually misconceptions and a similar effect must exist in metals as recently predicted in Ref. 5. Its physical picture, however, is in a sense opposite of the conventional interpretation. The phenomenon should be viewed not as a local bulk but as a surface transition, which can be isothermally and reversibly turned on and off by the external voltage. We find the conditions for the existence of the VCFO in metals, obtain the dependence of physical quantities on the applied voltage, and discuss complications, together with possible solutions, on the way to its experimental realization.The density of itinerant carriers in a ferromagnet defines the strength of the exchange coupling and consequently the magnitude of T C . The reserve statement is also qualitatively correct: that T C is high directly points out on high no matter what the ferromagnet is-a metal or a DMS. For example, in th...

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Voltage-controlled surface magnetization of itinerant ferromagnetNi1−xCux

Cited by 15 publications

References 16 publications

Multi-ferroic and magnetoelectric materials and interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Large magnetoelectric effect in ferroelectric/piezomagnetic heterostructures

Theory of electric-field-controlled surface ferromagnetic transition in metals

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