Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

Abstract

We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.

Terahertz transmission and effective gain measurement of two-dimensional electron gas

“…The experimental configuration used in the present investigation has been discussed in Ref. . Briefly, the set‐up consists of an electronic source, a bolometer, and a cryostat for low temperature measurements.…”