Voltage-driven class E amplifier and applications

Brabetz, T.; Fusco, Vincent

doi:10.1049/ip-map:20045159

Cited by 15 publications

(2 citation statements)

References 3 publications

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“…At 4 V the efficiency falls below 60% as the transistor approaches its knee voltage. The gain rolls off as the amplifier enters its saturation region, typical of high efficiency amplifiers [18].…”

Section: Rf Pamentioning

confidence: 99%

Inductor‐less envelope modulated radio frequency power amplifier using stacked amplifiers and envelope shaping

Watkins

2013

IET Microwaves, Antennas & Propagation

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An envelope modulated radio frequency (RF) power amplifier (PA) is presented using a ‘stacked amplifiers’ modulator. The modulator combines the efficiency of class G with the convenience of a charge pump. Since it is a single band modulator, no large inductors or transformers are required. A two level prototype has been developed and tested with a 7.5 dB peak‐to‐average power ratio 1.4 MHz bandwidth long term evolution (LTE) signal. Envelope shaping was used to improve linearity. Individually the modulator achieved between 54 and 60% efficiency, dependant on the envelope shaping function. When combined with a suitable class E PA, 40% DC to RF efficiency was achieved at 1.38 W output power with the 1.4 MHz LTE signal.

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Section: Rf Pamentioning

confidence: 99%

Inductor‐less envelope modulated radio frequency power amplifier using stacked amplifiers and envelope shaping

Watkins

2013

IET Microwaves, Antennas & Propagation

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“…Recently, an inverse class E amplifier was proposed and investigated as an alternative to the classic class E amplifier [1][2]. This circuit ( Figure 1) employs a bias choke L3 for feeding the DC supply current to the switching device.…”

Section: Introductionmentioning

confidence: 99%

A 900 MHz 10 mW monolithically integrated inverse class E power amplifier

2010

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Abstract-This work demonstrates a new integrated inverse class E amplifier circuit, employing a pHEMT switching device and fully integrated output network for pulse shaping. The circuit is particularly suitable for full integration, since it does not need any RF choke for biasing, and no DC blocking capacitor is needed between the switch and the output network parallel resonance circuit. The back plate capacitances of the additional capacitors are not connected to nodes that carry RF voltage signals. A commercial GaAs monolithic microwave integrated circuit process was used for fabricating the prototype circuit. 11.5 mW output power and 39% drain efficiency with 0.9 V supply voltage was measured at 895 MHz operating frequency. The output power remains over 10mW across 850-925 MHz, and the drain efficiency remains above 32% across this frequency range.

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Digitally defined wireless transmitter based on Class E amplifier

Brabetz

Fusco

2007

Micro & Optical Tech Letters

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This novel digitally defined transmitter without digital‐to‐analog converters is based on Class E amplifiers' ability to transform a digital input signal into an analog RF output signal. The validity of the system is proven by successful demodulation of a QPSK signal generated by the transmitter from a pulse‐position‐modulation input signal. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 843–846, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22285

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Voltage-driven class E amplifier and applications

Cited by 15 publications

References 3 publications

Inductor‐less envelope modulated radio frequency power amplifier using stacked amplifiers and envelope shaping

Inductor‐less envelope modulated radio frequency power amplifier using stacked amplifiers and envelope shaping

A 900 MHz 10 mW monolithically integrated inverse class E power amplifier

Digitally defined wireless transmitter based on Class E amplifier

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