2017
DOI: 10.1109/tcad.2017.2756561
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Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications

Abstract: Resistive switching devices are non-linear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this work, a SPICE implementation of a novel compact model is presented and put under test by means of different circuit configurations. The model is based on two identical opposite-biased diodes in series with a resistor where the switching behavior is governed by the creation and rupture of multiple conductive channels. Resul… Show more

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Cited by 33 publications
(32 citation statements)
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“…Miranda has also considered diode‐like conduction in combination with the hysteron structure for the memory state (see Figure ). The memdiode model was recently written for circuit simulation environments such as LTspice and is able to represent the intermediate states exhibited by many RS devices.…”
Section: Physical and Circuit Models Of Breakdown And Resistance Switmentioning
confidence: 99%
“…Miranda has also considered diode‐like conduction in combination with the hysteron structure for the memory state (see Figure ). The memdiode model was recently written for circuit simulation environments such as LTspice and is able to represent the intermediate states exhibited by many RS devices.…”
Section: Physical and Circuit Models Of Breakdown And Resistance Switmentioning
confidence: 99%
“…A promising memristor compact model providing high simulation accuracy at reduced computational cost was presented by Miranda et al in Refs. [39], [40]. Its closed-form expression for the I-V curve (continuous and differentiable) and the recursive nature of the state variable computation, makes it suitable for dealing with arbitrary input signals (continuous and discontinuous, differentiable and non-differentiable).…”
Section: Introductionmentioning
confidence: 99%
“…In this work, the switching elements at the intersections of the lines are modelled as memdiodes. A memdiode is a behavioral memory device represented by a diode with hysteretic properties [13,16]. For the sake of completeness, it is succinctly reviewed here.…”
Section: Memdiode Modelmentioning
confidence: 99%