Voltage impulse induced bistable magnetization switching in multiferroic heterostructures

Abstract

We report on voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature. This was realized through strain-mediated magnetoelectric coupling between ferroelectric PZT and ferromagnetic FeGaB layer. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. These voltage impulse induced bistable magnetization switching in multiferroic heterostructures provides a promising approach to power efficient bistable magnetization switching that is crucial for information storage.

Combining ferromagnetic resonator and digital image correlation to study the strain induced resonance tunability in magnetoelectric heterostructures

“…Many ME systems based on ferromagnetic/ferroelectric heterostructures have been developed, encompassing voltage-tunable microwave signal processing devices [3][4][5], magnetoelectric random access memory devices [6][7][8][9] and strain-control GMR devices [10][11][12]. For all these kinds of systems, the properties are controlled via the elastic voltage-induced strains transmitted from the ferroelectric medium to the ferromagnetic one.…”

Voltage control of ferromagnetic resonance

“…[32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48] The E-field was applied across substrate and the magnetic field was applied along the in-plane (IP) direction, vertical to the microwave propagation. As an E-field is applied, the piezoelectric substrate undergoes a tensile or compressive deformation and that strain can be coherently transferred to magnetic films resulting in an effective magnetic field H eff through the magnetoelastic effect.…”

“…Lots of layered strain/stress dominated multiferroic heterostructures such as bulk/bulk, [27][28][29][30][31] thin film/bulk [32][33][34][35][36][37][38][39][40][41][42][43][44][45] and thin film/thin film 47 magnetic/ferroelectric or magnetic/piezoelectric heterostructures were demonstrated in this paper. By applying voltage across the ferroelectric/piezoelectric layer, the ferroelectric/piezoelectric layer generates a large strain/stress energy change that influence the magnetic layer, therefore, change the effective magnetic anisotropy energy which lead to an effective FMR field or frequency change.…”

“…Nevertheless, the FMR tunability (< 200MHz) 25-27 is limited by bulky magnetic slab and bonding interface. Further, researchers deposited nanoscale magnetic thin film onto well-polished ferroelectric/piezoelectric slab such as Ni/PMN-PT, 32 FeGaB/PZT, 36 FeGaB/ PZN-PT, 42 Terfenol-D/PZN-PT, 43 etc. The well-established interface and magnetic thin film allows the strain/stress energy transferred and affected magnetic energy efficiently.…”

Effect of interface NiO layer on magnetism in Fe/BaTiO3 thin film

“…[1][2][3][4][5][6] The ferromagnetic-ferroelectric heterostructure is a simple case of controlling magnetism by applying an electric field to ferroelectric materials. In that sense, we focus on a simple multiferroic heterostructure, Fe=BaTiO 3 , and observe its interface state with the aim of controlling the magnetoelectric effect.…”