Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN

Abstract

A voltage tunable surface acoustic wave (SAW) phase shifter on a two-dimensional electron gas (2DEG) AlGaN/GaN heterostructure has been developed. The acoustoelectric interaction is field-effect modulated by means of an insulated gate placed in the acoustic path of a SAW delay line. The phase velocity under the gate is tuned by modifying the conductance of the 2DEG with a dc bias, while the insulating layer prevents the screening of the SAW piezoelectric fields by the gate. The device is compatible with the nitride transistor technology for signal processing and frequency control applications.

Nanoscale anisotropic plastic deformation in single crystal GaN

“…GaN-related III-nitride materials are attracting increasing attention for a wide range of device applications, such as light-emitting diodes [ 1 ], blue laser devices [ 2 ], and high electron mobility transistor [ 3 ]. Besides, GaN also exhibits attractive mechanical properties for potential device manufacture such as making microelectromechanical systems and making surface acoustic wave device [ 4 , 5 ]. Therefore, there is an increasingly growing interest in the elasto-plastic mechanical behaviors of GaN material [ 6 - 16 ].…”

The Experimental Registration of the Evanescent Acoustic Wave in YX LiNbO3 Plate

“…If a traveling wave propagates in such a plate and interacts with the defect, various types of evanescent waves are generated. If a layer is placed on the surface of the plate under investigation, the conductivity of which can be changed, for example, by an electric field [ 43 , 44 ], then at certain conductivity an additional traveling wave will appear, indicating the presence of a defect. It is obvious that the implementation of this method requires additional calculations and experiments.…”

“…Another possible field of application of these waves is the development of controlled acoustoelectronic devices. One of the control methods is the arrangement of a heterostructure with a conductivity variable by an applied electric field on the surface of the plate [ 43 , 44 ]. Similar studies were carried out earlier for forward and backward acoustic waves in various piezoelectric materials [ 45 , 46 , 47 , 48 , 49 ].…”

Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering

“…In particular, AlN has been recognised as one of the most suitable materials for high‐frequency filters, duplexers and resonators because of its high SAW velocity $ (v_{\rm SAW})$ and its insulating nature 1, 2. However, the integration with the nitride high electron mobility transistor (HEMT) technology has spurred the research in SAW filters based on AlGaN alloys 3. While the AlGaN/GaN HEMT technology is well established, the use of alternative InAlN lattice‐matched barriers has recently been proved to yield a superior microwave performance 4.…”