Volume Optimization in Si IGBT based Dual-Active-Bridge Converters

Abstract

Dual-Active-Bridge (DAB) converters are able to step up/down DC voltage in a wide range by adopting medium frequency transformer (MFT) for isolating and converting voltage level. Increase in switching frequency of Si IGBTs reduces the MFT size instead it intensifies the semiconductor switching losses which leads to increase in the heatsink size. In this paper variation of heatsink volume versus frequency is compared versus MFT. MFT and heatsink volume of a 5 kW 600 to 400 V DAB converter are optimized. Obtained results show that variation of switching frequency in range 1-10 kHz increases the size of optimal heatsink by 3 times, i.e

Vf ‐constrained ηρ ‐pareto optimisation of medium frequency transformers in ISOP‐DAB converters

“…There are some positive consequences of increasing switching frequency such as small volume of MFT and filter size. However, increase of power losses and heatsink volume adversely restricts [31]. Hence, a trade‐off for selecting frequency must be taken into account.…”

Adaptive dead time compensation for cross-period single phase shift control of dual active bridge converters

“…The main energy transfer element is the leakage inductance between the primary and secondary side, this parameter greatly inuences the converter behavior [3]. [6] and increasing the switching frequency to reduce physical size [7]. For transformers, with low switching frequency and low leakage inductance, the authors proposed the cross-period single phase shift (CP-SPS) control method, which allows outstanding load regulation properties (e.g.…”

Design Optimisation of a Current-Fed Solid-State Transformer for MV Grid-Connected Applications

“…Main objective functions are typically minimum losses [22][23][24][25] and or maximum power density (minimum volume) [26][27][28][29]. Other objectives include minimum dc-link capacitance [30] and minimum heatsink volume [31]. Typical optimisation parameters are flux density, current density, switching frequency, number of converter cells [22,25,26,[28][29][30][31] and types of semiconductor devices [23,27].…”

“…Other objectives include minimum dc-link capacitance [30] and minimum heatsink volume [31]. Typical optimisation parameters are flux density, current density, switching frequency, number of converter cells [22,25,26,[28][29][30][31] and types of semiconductor devices [23,27]. In [22], the flux density is used as the main optimisation parameter, and the switching frequency is kept constant.…”

“…In [22], the flux density is used as the main optimisation parameter, and the switching frequency is kept constant. In [25][26][27][28][29][30][31], however, switching frequency is used as the main optimisation parameter while the flux density is kept constant. Different methods are used for core power losses, including the General Steinmetz Equation, where sinusoidal waveforms are assumed [32], and the improved General Steinmetz Equation (iGSE) [33,34].…”