Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition

Abstract

correlated pervoskites, which could eventually lead to a new generation of devices exploiting the intrinsic MIT of these systems.

Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3‐Terminal Devices

“…[4] The promising performance of RRAM cells in terms of endurance, retention, and switching speeds justifies the large efforts performed by www.advelectronicmat.de This manuscript demonstrates the power of controlling the oxygen exchange mechanism in the volume resistive switching phenomenon by understanding and engineering of the RS effect in a metallic complex oxide displaying MIT, whose functionalities are exemplified with a proof-of-concept three-terminal (3-T) device. [13] We provide an explanation supported on strong evidences for an oxygen migration-mediated RS effect in LSMO films (and extensible to other metallic complex oxides, such as cuprates and nickelates [10] ), while material engineering through the use of a bilayer system with an oxygen buffer layer offers novel functional devices as the proof-of-concept 3-T device presented. [13] We provide an explanation supported on strong evidences for an oxygen migration-mediated RS effect in LSMO films (and extensible to other metallic complex oxides, such as cuprates and nickelates [10] ), while material engineering through the use of a bilayer system with an oxygen buffer layer offers novel functional devices as the proof-of-concept 3-T device presented.…”

“…That is the case of actual devices relying on widely used filamentary-type resistive switching (RS) mechanism, [6] where the main difficulty lies on the random formation (and subsequent rupture) of the aforementioned filament (which determines whether the device is in an ON or an OFF state, respectively), or leakage currents that could arise in the devices, as well as other issues intrinsically arising from the high nonlinearity electric field dynamics of the materials. Alternatively, the interest of strongly correlated systems with functional properties, such as metal-insulator transition (MIT), is growing [8][9][10] and heading toward applications. Alternatively, the interest of strongly correlated systems with functional properties, such as metal-insulator transition (MIT), is growing [8][9][10] and heading toward applications.…”

“…Alternatively, the interest of strongly correlated systems with functional properties, such as metal-insulator transition (MIT), is growing [8][9][10] and heading toward applications. [10,12,13,36] Oxygen release from the crystal lattice would generate oxygen vacancies in the system, concomitant with a decrease of the charge carriers in the system and a valence state reduction (Mn +4 → Mn 3+ ). [11] Previous studies have related the resistive switching effect in metallic perovskite oxides to their intrinsic MIT properties even through film thickness up to 10 nm suggesting a volume resistive switching mechanism.…”

“…Alternatively, the interest of strongly correlated systems with functional properties, such as metal-insulator transition (MIT), is growing [8][9][10] and heading toward applications. Alternatively, the interest of strongly correlated systems with functional properties, such as metal-insulator transition (MIT), is growing [8][9][10] and heading toward applications.…”

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

“…Here, it is the choice of the cations that defines the overall mixed ionic electronic transport and redox-processes of the material class, where careful guidelines on structure, chemistry and doping are presented for their use as resistive switches. The role of metal-insulator transitions on resistive switching of perovskite oxides and potential impact on structural and chemical design rules are discussed by Gonzales-Rosillo and co-workers from the Puig group [12]. Kubicek, Taibl, Navickas, Hutter, Fafilek and Fleig investigate and review bias effects and mechanisms at high and low temperature for strontium titanate perovskites [13].…”