Volumenersatzlösungen

Sirtl, C.; Laubenthal, H.; Schimetta, Wolfgang

doi:10.1007/978-3-540-76302-4_24

Cited by 4 publications

(3 citation statements)

References 32 publications

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“…The method of selective etching of the cross-sections of crystal [42,43] with subsequent TEM-analysis was used to reveal the distribution of grown-in microdefects. The TEMstudies were conducted by methods "black-white contrast" [see, e.g.…”

Section: Experimental Methodsmentioning

confidence: 99%

Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon

Talanin

Levinson

2002

Cryst. Res. Technol.

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With the help of selective etching, transmission electron microscopy complex researches of non‐doped dislocation‐free single crystals of float‐zone silicon by a diameter of 30 mm were conducted. The crystals were obtained with various growth rates and were subjected to various kinds of technological effects. Is established that the process of microdefects formation in silicon proceeds simultaneously on two independent mechanisms:vacancy and interstitial. The physical model of formation of microdefects in dislocation‐free monocrystals of FZ silicon is offered.

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Section: Experimental Methodsmentioning

confidence: 99%

Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon

Talanin

Levinson

2002

Cryst. Res. Technol.

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“…Since /zt (linear absorption coefficient × thickness of specimen) was 0.14 ~0.56, the extinction contrast was dominant. After the X-ray observation, the surfaces of the specimens were chemically etched in Sirtl solution (Sirtl & Adler, 1961), and the optical micrographs of the etched surfaces were compared with the X-ray topographs.…”

Section: Methodsmentioning

confidence: 99%

X-ray study of small dislocation loops in thermally oxidized silicon

Kawado¹,

Maruyama²

1972

J Appl Cryst

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Lattice defects in thermally oxidized silicon waters have been investigated by X-ray transmission topography. Many dotted lattice defect images were observed in the X-ray topographs. From observation of the variation in the image contrast between reflecting planes, it was found that these defects have a principal displacement along one of the (111) directions and another small displacement component perpendicular to this direction. The surfaces of the specimens were chemically etched in Sirtl solution after X-ray topography. Etch hillocks were found to be loops and half loops in the optical micrographs. One-to-one correspondence was found to exist between the etch hillocks and the X-ray images of defects. It was concluded that the defects are small dislocation loops and half loops lying on one of {111 } planes and having a Burgers vector a/3 (111 ) normal to the plane. The shapes and the contrasts of Observed X-ray images were well explained by the displacement around a partial dislocation of edge type.

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“…oontact ie the souroe of nevi dielooatione whioh multiply by thermal s t r e s s . Now oryatal regions of d i f f e r e n t dislooation 3 determined a f t e r the measurement by etching (10). W e measured the "floating-preeeure" of the speoimens r e l a t i v e t o eaoh other at oonstant temperature.…”

mentioning

confidence: 99%