The superconducting properties of Bi2Sr2−xLaxCuOy thin films irradiated by 1 GeV heavy ions have been investigated. Firstly, irradiation produces dramatic changes in Tc and in R(T ). This fact is attributed to a self-doping effect of the sample by oxygen liberated from the ion tracks. Secondly, the pinning properties of the columnar defects allowed us to probe different vortex behaviours for films with increasing La content (0 ≤ x ≤ 0.4). From the angular dependence of R(H) and Jc(H) in the mixed state, for a given column density, a directional pinning effect, or linear vortex behaviour, is observed for low x values, whereas no directional effect is seen for large x values and 2D scaling properties, characteristic of pancake vortices, are then observed. Importantly this reveals that changes in x induce large changes in the material anisotropy.Heavy ion irradiation of high T c compounds is a convenient way to create amorphous columns, 10-12 nm in diameter, of given density and direction, which are able to pin vortices. The majority of experiments have been made on BiSrCaCuO single crystals. By studying the transport properties of irradiated Bi 2 Sr 2−x La x CuO y thin films and using the La substitution to modify material properties, we were able to demonstrate the original effects of irradiation in this little studied system.Bi 2 Sr 2−x La x CuO y thin films (0 ≤ x ≤ 0.4) were epitaxially grown on heated single crystal SrTiO 3 substrates by reactive RF sputtering. Their composition and thickness were measured by RBS. Their microstructure, and in particular the evolution vs. x of the modulation amplitude were thoroughly studied by X-ray diffraction [1]. The films are single-phase and c-axis oriented with a disorientation of less than 0.2 deg. Irradiation was performed at GANIL with 1 GeV Pb ions. In this paper the direction of irradiation was along the c-axis with an equivalent field dose, B Φ =2 T or 3 T. Transport measurements were made on patterned films by a dc 4 probe technique. Measurements of R and J c in the mixed state were conducted for 1.2 K ≤ T ≤ T c and 0 ≤ H ≤ 8 T as a function of the field orientation θ with respect to the c-axis.The first striking consequence of heavy ion irradiation of these films is a strong change in T c . By irradiating optimally doped thin films, T c is dramatically decreased. Typically such films, with T c in the range 12 K-15 K for x = 0 and irradiated with a dose B Φ = 2 T, have their T c reduced by almost a factor 3. At the same time the sample resistance is increased and its behaviour changes from linear to non-linear with a positive curvature, characteristic of overdoped samples. The change in hole doping, evaluated in [2], is almost linear with the dose, B Φ , and twice as large in Bi-2201 as in Bi-2212 films. In contrast, by irradiating underdoped films, T c is increased and the resistance is decreased. Strikingly, irradiation is able to turn a semiconducting film into a superconducting one at low temperature (Fig. 1). This leads us to conclude that irradiation produce...