W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology

Abstract

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.