W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

Abstract

Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper, neuromorphic transistors with W-doped In2O3 nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current (EPSC), long-term potentiation (LTP) and depression (LTD). Moreover, the synaptic plasticity of the nanofiber transistor can be synergistically modulated by light pulse and electrical pulse. At last, pulsed light learning and pulsed electrical forgetting behaviors were emulated in 5×5 nanofiber device array. Our results provide new insights into the development of nanofiber optoelectronic neuromorphic devices with synergistic synaptic plasticity.

One memristor–one electrolyte-gated transistor-based high energy-efficient dropout neuronal units

“…A broad spectrum of devices such as memristors, electrolyte-gated transistors, electrochemical cells, and spintronics, have been proposed with multilevel characteristics and synapse-like properties. [3][4][5][6][7][8][9][10][11] The multilevel characteristics can be exploited for implementing in situ vector-matrix multiplication (VMM) operations which are dominant the computational load for artificial intelligence (AI) algorithms. [12] Some of these devices have been demonstrated with extreme high energy-efficiency (e.g., larger than tera operations per second per watt, TOPS/W), revealing the great potential for building an energy-efficient platform for machine learning.…”