W Doping and Voltage Driven Metal–Insulator Transition in VO<sub>2</sub> Nano-Films for Smart Switching Devices

Ling, Chen; Zhao, Zhiyong; Hu, Xinyuan; Li, Jingbo; Zhao, Xiangshan; Wang, Zongguo; Jin, Haibo

doi:10.1021/acsanm.9b01640

Cited by 43 publications

(34 citation statements)

References 67 publications

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“…The detailed V-3d projected density of states (PDOS) reveals that the band gap forms between the occupied d ∥ orbital and the empty π* orbital, resulting from the V 3d band splitting as shown in the top panel of Figure 3b, consistent with the reported experiment and calculations. 13,14,23 The 0.25 hole/f.u. doping reduces the band gap to 0.57 eV, and the Fermi level E F shifts toward the VB in the middle panel of Figure 3a,e.…”

Section: Resultsmentioning

confidence: 99%

Hole Dopants Disentangling Peierls–Mott Relevance States of VO₂ by First-Principles Calculation

Ling

Wang

et al. 2021

J. Phys. Chem. C

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The formation mechanism of the metastable M2-phase VO2, which is believed to be a true Mott insulator, has attracted great attention for understanding the intriguing physics of the metal–insulator transition of VO2 and the promising application in ultrafast electronic switching devices. Herein, we conducted the hole-doping calculation regardless of the type of element and revealed theoretically that the hole carriers disentangle the complex Mott–Peierls relevance states of M1-phase VO2. The hole induces the zigzag dimerized V–V chains to separate into two different states: one remains paired but straight and the other remains zigzag but unpaired. The dedimerization weakens the intradimer hopping, which makes the superexchange interaction come into effect, consequently resulting in the formation of the spin antiferromagnetic ordering along the zigzag unpaired V–V chains, indicating that the Mott correlation plays a dominant role in the formation of M2-VO2. This work gives an insight into the mechanism of stabilizing the “true” Mott insulator M2-VO2, which would offer an opportunity for the realization of Mott transition field-effect transistors.

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Section: Resultsmentioning

confidence: 99%

Hole Dopants Disentangling Peierls–Mott Relevance States of VO₂ by First-Principles Calculation

Ling

Wang

et al. 2021

J. Phys. Chem. C

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“…A number of strategies were proposed to reduce the VO 2 MIT temperature including chemical doping, stoichiometry engineering, epitaxial strain, and hydrogenation . So far, tungsten (W 6+ ) is recognized as the most effective doping element for lowering the T c by approximately 25–30 °C per atom % W. − Recently, a number of outstanding results have been achieved in lowering the vanadium dioxide MIT temperature by cationic doping while maintaining superior THz performance. Émond et al .…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Ivanov

Tatarenko

Gorodetsky

et al. 2021

ACS Appl. Nano Mater.

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We report a feasible and high-throughput method for high-quality W-doped VO 2 nanostructured epitaxial films on rsapphire substrate fabrication. Single-phase, smooth vanadium dioxide thin films with uniform distribution of tungsten (up to 2.3%) are formed using the solvothermal process from ethylene glycol/water V 4+ and W 6+ solutions. Compositional analysis by X-ray photoelectron and energy-dispersive X-ray spectroscopy (XPS and EDX, respectively); structural analysis (X-ray diffraction, Raman spectroscopy, selected area electron diffraction (SAED)); and detailed analysis of the surface morphology and substrate−film interface using scanning electron microscopy, atomic force microscopy, and high-resolution transmission electron microscopy (SEM, AFM, HRTEM, respectively) confirm the formation of nanoscale (50−60 nm) epitaxial W:VO 2 (M 1 ) on r-sapphire with epitaxial relationships (100)VO 2 ∥(101̅ 2)Al 2 O 3 and [010]VO 2 ∥[011̅ 0]Al 2 O 3 . The nanostructured films demonstrate excellent terahertz (THz) transmission properties: a phase transition temperature of 31 °C, a huge THz modulation depth of over 60%, and broad bandwidth (≥2 THz) operation. Hence, they can be efficiently used as active material for tunable THz manipulation devices.

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“…Like the phase transition property with temperature, the VO 2 film also present a sharp change in resistance with voltage. [24]. The electro-induced phase transition (e-MIT) has the advantages of fast response speed, a more convenient mode of action.…”

Section: Resultsmentioning

confidence: 99%

Influence of temperature on the electro-induced MIT of VO2 prepared by the magnetron sputtering method

Sun

Yang

et al. 2021

Matéria (Rio J.)

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Vanadium dioxide (VO 2 ) is a typical representative of the strongly correlated electronic system. It presents a reversible first-order metal-insulator transition once stimulated by temperature, voltage, light, or pressure. The insulation-metal phase transition (MIT) makes it a new type of functional material with excellent potential applications in many fields. In this paper, magnetron sputtering technology and the "two-step method" process are used to prepare the VO 2 films with phase transition properties. The results show that after the classic V film is processed for more than 100 minutes in air, and annealed in N 2 atmosphere for 150 minutes, the VO 2 (M) can be obtained with a resistance change rate more than three orders of magnitude. The study of the resistance change under the action of temperature and voltage found that the temperature of the heating and cooling phase transition are 67.4℃ and 62.8℃ respectively, and the hysteresis width is 4.6℃. The relationship between phase transition voltage and ambient temperature is presented based on the heat dissipation model. It is found that Joule heating plays a significant role in the electro-induced phase transition of VO 2 . Furthermore, the ambient temperature has an obvious regulation effect on the phase transition voltage of VO 2 film. The research results can provide efficient guidance to the preparation of VO 2 film and the application and regulation of electro-induced phase transition.

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W Doping and Voltage Driven Metal–Insulator Transition in VO₂ Nano-Films for Smart Switching Devices

Cited by 43 publications

References 67 publications

Hole Dopants Disentangling Peierls–Mott Relevance States of VO₂ by First-Principles Calculation

Hole Dopants Disentangling Peierls–Mott Relevance States of VO₂ by First-Principles Calculation

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Influence of temperature on the electro-induced MIT of VO2 prepared by the magnetron sputtering method

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W Doping and Voltage Driven Metal–Insulator Transition in VO2 Nano-Films for Smart Switching Devices

Cited by 43 publications

References 67 publications

Hole Dopants Disentangling Peierls–Mott Relevance States of VO2 by First-Principles Calculation

Hole Dopants Disentangling Peierls–Mott Relevance States of VO2 by First-Principles Calculation

Fabrication of Epitaxial W-Doped VO2 Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Influence of temperature on the electro-induced MIT of VO2 prepared by the magnetron sputtering method

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W Doping and Voltage Driven Metal–Insulator Transition in VO₂ Nano-Films for Smart Switching Devices

Hole Dopants Disentangling Peierls–Mott Relevance States of VO₂ by First-Principles Calculation

Hole Dopants Disentangling Peierls–Mott Relevance States of VO₂ by First-Principles Calculation

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process