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Ahmed, Ejaz; Hill, Arthur E.; Pilkington, R.D.; Tomlinson, R. D.; Leppavuori, J; Levoska, J.; Kusmartseva, O.; Ahmed, Waqar; Afzal, A

doi:10.1023/a:1018684726577

Cited by 9 publications

(3 citation statements)

References 6 publications

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“…All these parameters affect the composition, microstructure, surface morphology, and electrical and optical properties of the grown films. Although there were several previous studies on the PLD growth of CIGS [8,[10][11][12][13][14][15], the influence of the pulse repetition rate has barely been investigated. From the experience of the PLD growth of other thin films, such as diamond, AlN, TiO 2 , ZnO, etc., we know that the effect of the repetition rate is equally important [16][17][18][19][20].…”

Section: Page 4 Of 26mentioning

confidence: 99%

The effects of pulse repetition rate on the structural, optical, and electrical properties of CIGS films grown by pulsed laser deposition

Chen

Chang

et al. 2015

Applied Surface Science

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Section: Page 4 Of 26mentioning

confidence: 99%

The effects of pulse repetition rate on the structural, optical, and electrical properties of CIGS films grown by pulsed laser deposition

Chen

Chang

et al. 2015

Applied Surface Science

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“…Site disorder, the replacement of chemical species on a fixed crystallographic lattice, has recently attracted interest across semiconductor research areas as a means to control optoelectronic properties. While site disorder-referred to from here on simply as disorder or the degree of order-has notably been studied as a mechanism for managing properties in chalcogenide transistors and solar cell materials for some time, [1][2][3][4][5] its application to such a vast array of ternary and multinary nitrides and phosphides is a more recent development. 6,7 Insight from broader comparisons of II-IV-N 2 materials has identified relationships between cation species, structural distortion, and electronic structure due to this disorder, 8 and in some systems, site disorder has been investigated as a means of lowering bandgap energies to ideal ranges for targeted applications.…”

Section: Introductionmentioning

confidence: 99%

Bandgap analysis and carrier localization in cation-disordered ZnGeN2

et al. 2022

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The bandgap of ZnGeN 2 changes with the degree of cation site disorder and is sought in light emitting diodes for emission at green to amber wavelengths. By combining the perspectives of carrier localization and defect states, we analyze the impact of different degrees of disorder on electronic properties in ZnGeN 2 , addressing a gap in current studies, which largely focus on dilute or fully disordered systems. The present study demonstrates changes in the density of states and localization of carriers in ZnGeN 2 calculated using bandgap-corrected density functional theory and hybrid calculations on partially disordered supercells generated using the Monte Carlo method. We use localization and density of states to discuss the ill-defined nature of a bandgap in a disordered material and identify site disorder and its impact on the structure as a mechanism controlling electronic properties and potential device performance. Decreasing the order parameter results in a large reduction of the bandgap. The reduction in bandgap is due, in part, to isolated, localized states that form above the valence band continuum associated with nitrogen coordinated by more zinc than germanium. The prevalence of defect states in all but the perfectly ordered structure creates challenges for incorporating disordered ZnGeN 2 into optical devices, but the localization associated with these defects provides insight into the mechanisms of electron/hole recombination in the material.

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“…The smaller FWHM is indicative of larger grain size and better crystallinity in the fs-PLD CIGS. Furthermore, the existence of the (220)-oriented peak, which is beneficial for reducing the surface recombination of the CIGS absorber layer due to higher work function, is largely preserved only in films grown by the fs-PLD [13]. Preliminary studies have also shown that the relaxed structure usually accompanies with the broadened peak of (112) orientation, which is associated with high degree of structural disorder [14].…”

Section: Resultsmentioning

confidence: 99%

Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition

et al. 2014

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In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.

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Untitled

Cited by 9 publications

References 6 publications

The effects of pulse repetition rate on the structural, optical, and electrical properties of CIGS films grown by pulsed laser deposition

The effects of pulse repetition rate on the structural, optical, and electrical properties of CIGS films grown by pulsed laser deposition

Bandgap analysis and carrier localization in cation-disordered ZnGeN2

Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition

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