Wafer bonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105 °C

Karim, A.; Abraham, P.; Lofgreen, D. D.; Chiu, Yi‐Jen; Piprek, Joachim; Bowers, John E.

doi:10.1063/1.1368377

Cited by 46 publications

(20 citation statements)

References 5 publications

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“…Efficiency and high speed at low power in VCSEL with wavelength of 850-980 nm are a suitable light source for vast application in short-haul such as Gigabit Ethernet. Longer wavelength at 1300-1500 nm permit higher bit rates over longer distances such as optical communication networks [4].…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

Faez

Marjani

2011

IEICE Electron. Express

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Abstract:In the present work, a new structure of vertical cavity surface emitting laser (VCSEL) is designed and simulated. In this structure, InGaAsP is used as the active region which is sandwiched between GaAs/AlGaAs distributed bragg mirror at the top of structure and GaAs/AlAs distributed bragg mirror at the bottom. In this work, the hole etching depth was continued down to the top of lower spacer layer while in the previous work the hole etching depth was only down to top of the upper spacer. In this way, the threshold current decrement of 76.52% and increment the power by 28% from 5 mW to 6.4 mW at bias current of 9 mA was achieved. In this paper, device characteristics such as light power versus electrical current and voltage versus current are simulated and compared with the previous work. Keywords: design, high power, InGaAsP, VCSEL Classification: Optoelectronics, Lasers and quantum electronics, Ultrafast optics, Silicon photonics, Planar lightwave circuits Amann, "Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature," Electron. Lett., vol. 37, pp. 1295Lett., vol. 37, pp. -1296Lett., vol. 37, pp. , 2001 N. Nishiyama, C. Caneau, G. Guryanov, X. S. Liu, M. Hu, and C. E. Zah, "High efficiency long wavelength VCSEL on InP grown by MOCVD," Electron. Lett., vol. 39, pp. 437-439, 2003. [13] A. Karim, J. Piprek, P. Abraham, D. Lofgreen, Y.-J. Chiu, and J. ReferencesE. Bowers, "1.55-um vertical-cavity laser arrays for wavelength-division multiplexing," IEEE

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Section: Introductionmentioning

confidence: 99%

Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

Faez

Marjani

2011

IEICE Electron. Express

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“…The lack of a robust aperturing technique on InP similar to the lateral oxidation of AlGaAs on GaAs has also slowed the rate of progress in long-wavelength VCSEL development. The best high-temperature results to date have been achieved using wafer bonded GaAs-AlGaAs distributed Bragg reflectors (DBRs) in both electrically pumped [5] and optically pumped [6] designs. The high thermal conductivity and index contrast available in the GaAs-AlGaAs material system make it an attractive choice for fabricating long-wavelength VCSEL DBRs.…”

Section: Introductionmentioning

confidence: 99%

1.55-μm vertical-cavity laser arrays for wavelength-division multiplexing

Karim

Piprek

Ábrahám

et al. 2001

IEEE J. Select. Topics Quantum Electron.

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“…Early work on electrically pumped wafer-bonded VCSELs suffered from p-type free-carrier losses and large voltage drops at the p-p bonded interface [9]. The work of [2] and [3] circumvented this problem by introducing a vertically integrated 850-nm optical pump and a completely undoped 1310-nm VCSEL.…”

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confidence: 99%

“…ECENT YEARS have seen a rich variety of approaches to long-wavelength vertical-cavity surface-emitting lasers (VCSELs) [1]- [9]. Both epitaxial mirror approaches and wafer-bonded mirror approaches have achieved room-temperature continuous-wave (RTCW) powers in the neighborhood of 1 mW or greater, and a few authors have reported continuous-wave (CW) lasing beyond 100 C [1]- [4].…”

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confidence: 99%