Wafer bonding and H-implantation mechanisms involved in the Smart-cut® technology

Maleville, Christophe; Aspar, B.; Poumeyrol, T.; Moriceau, H.; Bruel, M.; Auberton‐Hervé, A.J.; Barge, T.

doi:10.1016/s0921-5107(96)01923-x

Cited by 55 publications

(47 citation statements)

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“…This can be attributed to the increased density of -OH containing groups, which are known to interact and polymerize even at room temperature, provided that they are in close proximity. 22,23 Thus, the contact angle measurement confirms the plausibility of hydrophilic bonding.…”

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confidence: 61%

Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

et al. 2017

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Successful direct wafer bonding between InP and silicon-on-insulator (SOI) wafers has been demonstrated by adopting a 20-nm-thick Al2O3 as the intermediate layer. A detailed investigation on the property of the bonding interface is carried out. Water contact angle test reveals an improved hydrophilicity for both the InP and the Al2O3/SOI wafers after oxygen plasma surface activation. X-ray photoelectron spectroscopy is employed to characterize the bonding interface before and after the wafer bonding process. It is found that oxides are formed on the bonding interface during bonding, which helps ensure high quality hydrophilic bonding.

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confidence: 61%

Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

et al. 2017

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“…The baseline of a RBS channeling spectrum indicates the dechanneled potion of the channeling yield. If the damage is located near the surface and there is a well defined peak in the aligned spectrum, then the baseline can be approximated by drawing a straight line from a point of the aligned curve near the beginning of the damaged region, to a point on the spectrum for the aligned damaged crystal just below the damaged region (linear approximation) (see figure [4][5][6][7][8][9][10][11][12][13][14][15][16]. In the channeling analysis for the Ion-Cut samples, a higher accuracy for the damage profile was required.…”

Section: Rbs Channelingmentioning

confidence: 99%

“…The strength of the SEM in the topographical mode lies in the very large depth of field, i. e. the distance D the sample surface can be displaced from the point of focus without the sample surface going out of electron optical focus (see figure [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. The convergence angle α of the electron probe determines the depth of field of an SEM.…”

Section: Surface Blistermentioning

confidence: 99%

“…This very large depth of field for such a high resolution image provides a high accuracy in the surface blister depth measurements (see figure [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. Viewed in cross-section, the vertical distance between the blister bottom and the back wall of the surface blister do not exceed the depth of field and consequently are both in focus.…”

Section: Surface Blistermentioning

confidence: 99%

“…With less n-type background doping, the concentration of electrically active boron increases which results in a corresponding shift of the Fermi level towards the valence band E V . For the two lower n-type doped samples, after the boron implantation and activation, the Fermi level crosses the donor level for H in the bond-centered site E D BC and for H at the tetrahedral site E D T (see figure [7][8][9][10][11][12][13][14][15][16][17]. Therefore, at the assumed p-type dopant level, the implanted hydrogen is expected to be mainly in the positive charge state.…”

Section: Blister Formation In the B+h Implanted Samples When The Boromentioning

confidence: 99%

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On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Höchbauer

2001

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ZusammenfassungDer sogenannte "Ion-Cut", ein Schichtabspaltungsprozess mittels WasserstoffIonenimplantation und darauffolgender Probenerwärmung ist eine effektive, vielseitige und ökonomische Methode, um Siliziumschichten mit einer Dicke von nur einigen Nanometern von einem Siliziumsubstrat auf andere Materialien zu transferieren. Somit ermöglicht der Ion-Cut die Produktion von Siliziumschichen auf isolierenden Materalien ("silicon-on-insulator" (SOI) AbstractThe "Ion-Cut", a layer splitting process by hydrogen ion implantation and subsequent annealing is a versatile and efficient technique of transferring thin silicon surface layers from bulk substrates onto other substrates, thus enabling the production of silicon-oninsulator (SOI) materials. Cleavage is induced by the coalescence of the highly pressurized sub-surface H 2 -gas bubbles, which form upon thermal annealing. A fundamental understanding of the basic mechanisms on how the cutting process occurs is still unclear, inhibiting further optimization of the Ion-Cut process. This work elucidates the physical mechanisms behind the Ion-Cut process in hydrogen-implanted silicon. The investigation of the cleavage process reveals the cut to be largely controlled by the lattice damage, generated by the hydrogen ion irradiation process, and its effects on the local stress field and the fracture toughness within the implantation zone rather than by the depth of maximum H-concentration. Furthermore, this work elucidates the different kinetics in the H-complex formations in silicon crystals with different conductivity types, and examines the mechanically induced damage accumulation caused by the crack propagation through the silicon sample in the splitting step of the Ion-Cut process. Additionally, the influence of boron pre-implantation on the Ion-Cut in hydrogen implanted silicon is investigated. These studies reveal, that both, the atomic interaction between the boron implant and the hydrogen implant and the shift of the Fermi level due to the electrical activation of the implanted boron have a tremendous enhancing effect on the Ion-Cut process.

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Packaging of Advanced Micro‐ and Nanosystems

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et al. 2004

Advanced Micro and Nanosystems

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Wafer bonding and H-implantation mechanisms involved in the Smart-cut® technology

Cited by 55 publications

References 4 publications

Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Packaging of Advanced Micro‐ and Nanosystems

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