Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs

Abstract

In this work, we describe a new way to measure spin dependent charge capture events at MOSFET interfaces called near-zero-field spin dependent charge pumping (NZF SDCP) which yields similar information as conventional electron paramagnetic resonance. We find that NO anneals have a significant effect on the spectra obtained from 4H-SiC MOSFETs. We also likely resolve hyperfine interactions which are important for defect identification. Finally, we fully integrate a NZF SDCP measurement system into a wafer prober for high throughput applications.