Wafer-level site-controlled growth of silicon nanowires by Cu pattern dewetting

Yuan, Zhishan; Chen, Yunfei; Zhang, Ni; Wang, Yuelin; Hong, Yuling; Li, Tie

doi:10.1007/s12274-015-0771-5

Cited by 3 publications

(1 citation statement)

References 40 publications

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“…Silicon nanowires grown by CVD based on VLS mechanism are usually amorphous in nature, which means that there exist numerous dangling bonds on the surfaces [ 30 ]. The dangling bonds will generate extra carrier concentration n 1 (as shown in Equation (1)) and therefore lead to extra current I 1 = n 1 qsv , which makes the dark current higher than the others.…”

Section: Theoretical Analysismentioning

confidence: 99%

A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors

Yang

Liu³

et al. 2021

Biosensors

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Theoretical study and software simulation on the sensitivity of silicon nanowires (SiNWs) field effect transistor (FET) sensors in terms of surface-to-volume ratio, depletion ratio, surface state and lattice quality are carried out. Generally, SiNWs-FET sensors with triangular cross-sections are more sensitive than sensors with circular or square cross-sections. Two main reasons are discussed in this article. Firstly, SiNWs-FET sensors with triangular cross-sections have the largest surface-to-volume ratio and depletion ratio which significantly enhance the sensors’ sensitivity. Secondly, the manufacturing processes of the electron beam lithography (EBL) and chemical vapor deposition (CVD) methods seriously affect the surface state and lattice quality, which eventually influence SiNWs-FET sensors’ sensitivity. In contrast, wet etching and thermal oxidation (WETO) create fewer surface defects and higher quality lattices. Furthermore, the software simulation confirms that SiNWs-FET sensors with triangular cross-sections have better sensitivity than the other two types of SiNWs-FET sensors under the same conditions, consistent with the theoretical analysis. The article fully proved that SiNWs-FET sensors fabricated by the WETO method produced the best sensitivity and it will be widely used in the future.

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Section: Theoretical Analysismentioning

confidence: 99%

A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors

Yang

Liu³

et al. 2021

Biosensors

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Site-controlled fabrication of silicon nanotips by indentation-induced selective etching

Jin

Liu

et al. 2017

Applied Surface Science

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The indentation-induced selective etching approach is proposed to fabricate site-controlled pyramidal nanotips on monocrystalline silicon surface.  The height and radius of the pyramidal nanotips increase with the indentation force or etching time within the etching time of 20 min.  Various tip arrays on silicon surface can be produced by selective etching of the site-controlled indent patterns, and the maximum height difference of these tips is less than 10 nm.

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High-Efficiency Copper Removal by Nitrogen Plasma-Assisted Picosecond Laser Processing

Guo

Wang

et al. 2022

Micromachines

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Copper (Cu) removal efficiency is a key parameter in the processing of Cu-based electronic devices. Herein, a nitrogen plasma-assisted picosecond (ps) laser process for Cu removal is presented. Based on the cleaning and activation effect of nitrogen plasma on the surface of Cu film in ps-laser ablation, the removal efficiency can be significantly improved. Theoretically, the interaction mechanism between Cu and the ps-laser under the action of the plasma flow field is investigated by the dual temperature model (TTM) and finite element analysis (FEA). Meanwhile, the experimental results show that the angle of the plasma flow significantly affects the laser ablation of Cu. Small-angle plasma helps to improve the ps-laser processing precision of Cu, while large-angle plasma can effectively improve the ps-laser processing efficiency of Cu. Under the laser fluence of 2.69 J/cm2, the removal depth of the Cu film by a 30° plasma-assisted ps-laser is 148% higher than that by the non-plasma-assisted ps-laser, which indicates the application potential of nitrogen plasma in improving the laser ablation process.

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Wafer-level site-controlled growth of silicon nanowires by Cu pattern dewetting

Cited by 3 publications

References 40 publications

A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors

A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors

Site-controlled fabrication of silicon nanotips by indentation-induced selective etching

High-Efficiency Copper Removal by Nitrogen Plasma-Assisted Picosecond Laser Processing

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