Wafer-level vacuum package of two-dimensional micro-scanner

Chu, Hoang Manh; Sasaki, Takashi; Hane, Kazuhiro

doi:10.1007/s00542-017-3668-2

Cited by 6 publications

(3 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…x Fe y , and Zr x Co y RE z , where RE is a mixture of rare-earth metals (La, Ce, and Nd), are the most widely examined and applied. (38,54,56,57,60,(78)(79)(80)(81) For example, Zr x Ti y V z is the getter film used in many accelerators worldwide to improve the vacuum level.…”

Section: Nonevaporable Getter Materialsmentioning

confidence: 99%

“…A sustainable vacuum or well-controlled environment is required for various micro/ nanodevices to reach optimal performance and increase their lifetime. Some well-known examples are electromechanical or optomechanical micro/nanoresonators used in quartz or Si MEMS oscillators, (1) in physical resonant micro/nanosensors, (2,3) in radio-frequency filters, (4) in optical scanners, (5) in mass sensors with embedded fluidic microchannels, (6) or in quantum devices. (7) For these devices, a low ambient pressure is necessary to avoid squeeze (8,9) and slide (10) film vibration damping that can largely degrade the resonance quality factor and thus the device sensitivity, resolution, and stability.…”

Section: Introductionmentioning

confidence: 99%

“…(22,24) It was clearly demonstrated that NEG materials, once thermally activated, can pump by chemisorption most of the gases except noble gases inside the package cavity, and enable us to reach and maintain a good vacuum level. The NEG material is usually located at the bottom of the cap wafer cavity, but it can also be at the periphery of the device or cap wafer, (37) in an adjacent cavity, (17,38) notably when the cap is used as an optical window, and obviously at any other available places. Getter materials in the form of porous pills are still sometimes used, (13,16) but there are now widely replaced by getter materials in thin film form to limit their size as well as particle generation, and to allow their integration by batch processing.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Environment on Activation and Sorption of Getter Alloys and Multilayers for Hybrid Wafer-level Vacuum Packaging

Bosseboeuf¹,

Lemettre²,

Wu³

et al. 2019

Sensors and Materials

View full text Add to dashboard Cite

A large set of micro-and nanodevices requires hybrid vacuum packaging at the wafer level to optimize their performance and lifetime. When the temperature of the packaging fabrication process is limited, getter films must be integrated into the packaging cavity to obtain a low and sustainable pressure. In this paper, gas generation and residual gases inside a wafer-level package, as well as the main getter alloy films and multilayers investigated previously, are reviewed. An emphasis is put on the effect of a gaseous environment on the physicochemical mechanisms involved in getter film activation and gas sorption. A large outgassing occurs during the packaging fabrication process. It produces a gas load larger than or similar to that generated during the entire lifetime of the device at room temperature. The resulting partial pressures of gases in a micropackage are quite different from those found in ultrahigh vacuum during characterization by surface analysis techniques and when getter films are used in accelerators. Consequently, in micropackages, activation and sorption steps can no longer be analyzed separately and surface oxidation and/or oxygen bulk diffusion during activation should be taken into account. It is thus recommended to use and develop complementary characterization techniques that enable the investigation of surface and bulk phenomena at various temperatures, pressures, and gas mixtures for the assessment of getter films for vacuum packaging.

show abstract