Handbook of Photovoltaic Silicon 2018
DOI: 10.1007/978-3-662-52735-1_16-1
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Wafer Processing

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(1 citation statement)
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“…The surface roughness of mirrors in deep ultraviolet (DUV) lasers and ultrahigh power laser systems is required to reach an Ra<0.2 nm and a flatness of N<60 nm [1,2]. In order to realize extreme ultraviolet (EUV) exposure, the total thickness variation of a 12 inch bare silicon (Si) wafer is required to be less than 200 nm; and the middle spatial frequency roughness is required to be less than 0.1 nm [3]. In addition, inertial confinement fusion (ICF) is a fusion energy research project that attempts to initiate nuclear fusion reactions by heating and compressing a fuel target, typically in the form of a pellet that contains a mixture of deuterium and tritium.…”
Section: Introductionmentioning
confidence: 99%
“…The surface roughness of mirrors in deep ultraviolet (DUV) lasers and ultrahigh power laser systems is required to reach an Ra<0.2 nm and a flatness of N<60 nm [1,2]. In order to realize extreme ultraviolet (EUV) exposure, the total thickness variation of a 12 inch bare silicon (Si) wafer is required to be less than 200 nm; and the middle spatial frequency roughness is required to be less than 0.1 nm [3]. In addition, inertial confinement fusion (ICF) is a fusion energy research project that attempts to initiate nuclear fusion reactions by heating and compressing a fuel target, typically in the form of a pellet that contains a mixture of deuterium and tritium.…”
Section: Introductionmentioning
confidence: 99%