Wafer-Scale Demonstration of Low-Loss (∼0.43 dB/cm), High-Bandwidth (>38 GHz), Silicon Photonics Platform Operating at the C-Band

Abstract

The key advantage of silicon photonics comes from its potential for large scale integration, in a low-cost and scalable fashion. This has sustained the growth in the area despite disadvantages such as the lack of a monolithic light source, or the absence of a second order non-linear response (χ (2) ). Thus far, the work in the field has focused on reporting individual devices from a single die, with excellent performances. Wafer-level results, an area which has not been addressed sufficiently, is a critical aspect of silicon photonics and will provide the community with information regarding scalability and variation, which will be the key differentiating advantage of silicon photonics over other photonic platforms. In this work, we report the development of a low-loss, high-bandwidth C-band silicon photonic platform on a 200 mm CMOS-compatible process line, demonstrating wafer-level performance in the process. Ultra-low waveguide propagation loss with median values as low as 0.43 dB/cm has been achieved. Silicon Mach-Zehnder and microring modulators with median bandwidth of 38.5 and 43 GHz respectively are presented. Finally, germanium waveguide-integrated photodetectors with median bandwidth of 43 GHz are reported. The results reported in this work are comparable to prior demonstrations concerning individual devices. The baseline designs on this platform presented in this work can be accessed commercially from CompoundTek.

SiN optical phased array based on slab waveguide

“…And a scanning range of more than ±21.9° in the ψ direction can be obtained. Currently, multilayer SiN structures have been implemented on SOI platforms [6] , and the opa is fully capable of introducing silicon-based phase shifters to achieve low power consumption. We also obtained the scanning range in the θ direction by tuning the wavelength from 1500 nm to 1600 nm at ∆ϕ = 0.…”

Crown ether decorated silicon photonics for safeguarding against lead poisoning

“…1e , can undergo amine conjugation following Fischer esterification on SiO 2 , greatly broadening the range of applications (i.e., medical 30 , electronics manufacturing 31 , nuclear 28 , 33 ) that the developed platform can be extended to. As a corollary of complementary metal-oxide-semiconductor (CMOS) fabrication, SiP has proven to be a disruptive integrated photonic technology that enables high-precision mass manufacturing 38 . Through the synergistic integration of both technologies, the resulting platform is engineered to overcome several unaddressed issues against lead poisoning in society: 1).…”

“…5). Through established silicon manufacturing, SiP circuits can be mass-produced at low cost 38 . Furthermore, the crown-ether functionalization process is solution-based (reactants dissolved in green solvents, such as water and ethanol), implying that wafer-scale functionalization can be achieved, indicating scalability, with minimal environmental pollution.…”

Crown ether decorated silicon photonics for safeguarding against lead poisoning

“…1c, can undergo amine conjugation following Fischer esteri cation on SiO 2 /Si, greatly broadening the range of applications (i.e., medical 43 , electronics manufacturing 44 , nuclear 41,46 ) that the developed platform can be extended to. As a corollary of complementary metal-oxide-semiconductor (CMOS) fabrication, SiP has proven to be a disruptive integrated photonic technology that enables high-precision mass manufacturing, without compromises in yield [51][52][53][54] .…”

“…4). Through established manufacturing technologies, SiP circuits can be mass produced, at low cost [51][52][53][54] . Furthermore, the crown-ether functionalization process is solution-based (with reactants dissolved in green solvents such as water and ethanol), implying that wafer-scale functionalization can be achieved, indicating scalability, with minimal environmental pollution.…”