Wafer-scale engineering of two-dimensional transition metal dichalcogenides

Xiang, Lan; Cheng, Yingliang; Yang, Xiangdong; Zhang, Zhengwei

doi:10.1016/j.chip.2023.100057

Cited by 9 publications

(4 citation statements)

References 156 publications

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“…Notably, the threshold and output power we observe compare very favorably to other TMD devices (see Table 1 , where we present a selection of best performing devices reported in the literature. All characteristics were obtained at room temperature, except for ref ( 13 ), where lasing was achieved at 130 K maximum). We emphasize that the interplay between the coupling-in of the excitation and the coupling-out of the emitted light with different modes together determines the laser performance.…”

Section: Discussionmentioning

confidence: 99%

“…Metal–organic chemical vapor deposition (MOCVD) serves as an alternative route toward growing large-area layered materials with high quality, low cost, and improved yield . High-performance diodes and transistors have been successfully demonstrated with wafer-scale TMDs, − but lasers with CVD-grown TMDs have not yet been demonstrated. Here, we address these challenges by employing a design to resonantly enhance both the absorption at the pump wavelength and the emission at the lasing wavelength and by utilizing high-quality, large-area TMD monolayers grown by MOCVD.…”

Section: Introductionmentioning

confidence: 99%

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Lasing from a Large-Area 2D Material Enabled by a Dual-Resonance Metasurface

Barth,

Deckart,

Conteduca

et al. 2024

ACS Nano

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Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin nature of the active material in existing TMD lasers and the limited size due to mechanical exfoliation presents a challenge, as their limited output power makes it difficult to distinguish between true laser operation and other "laser-like" phenomena. Here, we present room temperature lasing from a largearea tungsten disulfide (WS 2 ) monolayer, grown by a wafer-scale chemical vapor deposition (CVD) technique. The monolayer is placed on a dualresonance dielectric metasurface with a rectangular lattice designed to enhance both absorption and emission, resulting in an ultralow threshold operation (threshold well below 1 W/cm 2 ). We provide a thorough study of the laser performance, paying special attention to directionality, output power, and spatial coherence. Notably, our lasers demonstrated a coherence length of over 30 μm, which is several times greater than what has been reported for 2D material lasers so far. Our realization of a single-mode laser from a CVD-grown monolayer presents exciting opportunities for integration and the development of real-world applications.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Lasing from a Large-Area 2D Material Enabled by a Dual-Resonance Metasurface

Barth,

Deckart,

Conteduca

et al. 2024

ACS Nano

View full text Add to dashboard Cite

show abstract

“…All characteristics were obtained at room temperature, expect for Ref. 13, where lasing was achieved at at 130 Kelvin maximum). We emphasis that the interplay between the coupling in of the excitation and the coupling out of the emitted light with different modes, together determine the laser performance.…”

Section: Discussionmentioning

confidence: 99%

“…metal-organic chemical vapor deposition (MOCVD) serves as an alternative route towards growing large-area layered materials with high quality, low cost, and improved yield 10 . High-performance diodes and transistors have been successfully demonstrated with wafer-scale TMDs [11][12][13] , but lasers with CVD grown TMDs have not yet been demonstrated. Here, we address these challenges by employing a design to resonantly enhance both the absorption at the pump wavelength and the emission at the lasing wavelength, and by utilising high-quality, large-area TMD monolayers grown by MOCVD.…”

Section: Introductionmentioning

confidence: 99%

Lasing from a large area 2D material enabled by a dual-resonance metasurface

Wang,

Barth,

Deckart

et al. 2023

Preprint

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Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin nature of the active material in existing TMD lasers and the limited size due to mechanical exfoliation presents a challenge, as their limited output power makes it difficult to distinguish between true laser operation and other "laser-like" phenomena. Here, we present room temperature lasing from a large-area tungsten disulphide (WS2) monolayer, grown by a wafer-scale chemical vapor deposition (CVD) technique. The monolayer is placed on a dual-resonance dielectric metasurface with a rectangular lattice designed to enhance both absorption and emission; resulting in an ultralow threshold operation (threshold well below 1 W/cm2). We provide a thorough study of the laser performance, paying special attention to directionality, output power, and spatial coherence. Notably, our lasers demonstrated a coherence length of over 30 μm, which is several times greater than what has been reported for 2D material lasers so far. Our realisation of a single-mode laser from a CVD-grown monolayer presents exciting opportunities for integration and the development of novel applications.

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Dual‐Crossbar Configurated Bi₂O₂Se Device for Multiple Optoelectronic Applications

Xie,

Yang,

Xie

et al. 2024

Laser & Photonics Reviews

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Two‐dimensional (2D) materials are widely used in numerous optoelectronic devices due to their ultra‐thin dimensions and versatile surfaces. However, less attention is paid to distinguishing the light‐matter interactions along the vertical and horizontal paths within the same 2D lattice, as well as comparatively investigating the optoelectronic behaviors between the sensitive top and bottom surfaces. Here, a dual‐crossbar configured architecture is designed and constructed based on Bi2O2Se semiconductor, featuring highly compact three‐in‐one assembly, namely bottom surface horizontal (BSH), middle sandwich vertical (MSV) and top surface horizontal (TSH) devices. The MSV with nanoscale channel possesses efficient separation and transportation of the photogenerated electrons and holes, responding faster to the light stimulation and compared favorably to the BSH and TSH devices. The optoelectric behaviors of the BSH device can be regulated by the characteristics of the substrate due to closer contact. Nevertheless, the performance of the TSH device is more sensitive to the environment, such as dopant absorption and heat dispersion, thus enabling the non‐volatile photoresponse and can be employed as an artificial optoelectronic synapse. This work highlights the importance of designing the device architecture based on the intrinsic structural advantages of 2D materials, paving the way toward integrated optoelectronics.

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Wafer-scale engineering of two-dimensional transition metal dichalcogenides

Cited by 9 publications

References 156 publications

Lasing from a Large-Area 2D Material Enabled by a Dual-Resonance Metasurface

Lasing from a Large-Area 2D Material Enabled by a Dual-Resonance Metasurface

Lasing from a large area 2D material enabled by a dual-resonance metasurface

Dual‐Crossbar Configurated Bi₂O₂Se Device for Multiple Optoelectronic Applications

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Wafer-scale engineering of two-dimensional transition metal dichalcogenides

Cited by 9 publications

References 156 publications

Lasing from a Large-Area 2D Material Enabled by a Dual-Resonance Metasurface

Lasing from a Large-Area 2D Material Enabled by a Dual-Resonance Metasurface

Lasing from a large area 2D material enabled by a dual-resonance metasurface

Dual‐Crossbar Configurated Bi2O2Se Device for Multiple Optoelectronic Applications

Contact Info

Product

Resources

About

Dual‐Crossbar Configurated Bi₂O₂Se Device for Multiple Optoelectronic Applications