Wafer-Scale Fabrication of Nitrogen-Doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection

Abstract

We demonstrated a simple and scalable fabrication route of a nitrogen-doped reduced graphene oxide (N-rGO) photodetector on an 8 in. wafer-scale. The N-rGO was prepared through in situ plasma treatment in an acetylene-ammonia atmosphere to achieve an n-type semiconductor with substantial formation of quaternary-N substituted into the graphene lattice. The morphology, structural, chemical composition, and electrical properties of the N-rGO were carefully characterized and used for the device fabrication. The N-rGO devices were fabricated in a simple metal−semiconductor−metal structure with unconventional metal-on-bottom configuration to promote high-performance photodetection. The N-rGO devices exhibited enhanced photoresponsivity as high as 0.68 A W −1 at 1.0 V, which is about 2 orders of magnitude higher compared to a pristine graphene and wide-band photoinduced response from the visible to the near-infrared region with increasing sensitivity in the order of 785, 632.8, and 473 nm excitation wavelengths. We also further demonstrated a symmetric characteristic of the photoinduced response to any position of local laser excitation with respect to the electrodes. The excellent features of waferscale N-rGO devices suggest a promising route to merge the current silicon technology and two-dimensional materials for future optoelectronic devices.

Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

“…To determine possible transport of the bilayer graphene, an analysis of temperature ( T ) dependence of the electrical resistance ( R ) was carefully performed at a temperature range of 100 to 350 K. The relation between temperature and resistance indicates that the bilayer graphene in this work behaves much like a semiconductor (d R /d T < 0) and consistent with our previous works, 43 , 44 where resistance decreases monotonically by increasing the temperature up to 350 K, as shown in Figure 4 a. Here, the negative value of the slope (d R /d T ) is attributed to the electrons activated from the valence band to the conduction band, which are driven by a thermal activation mechanism.…”

Liquid‐Exfoliated 2D Materials for Optoelectronic Applications

“…SiO 2 /Si wafer by in situ plasma treatment of the spin‐coated GO film in an acetylene‐ammonia atmosphere to produce n‐type semiconductor with substantial quaternary‐N substitution in the rGO lattice (Figure 7b). [ 73 ] The introduction of plasma in the acetylene‐ammonia atmosphere simultaneously reduces and n‐dopes the GO film with enhanced quaternary‐N substitution. Quaternary‐N substitution results in better n‐doping and carrier mobility enhancement in rGO film compared to other N‐substitution species.…”

“…Quaternary‐N substitution results in better n‐doping and carrier mobility enhancement in rGO film compared to other N‐substitution species. [ 73 ]…”

“…Reproduced with permission. [ 73 ] Copyright 2019, American Chemical Society. c) Sulphur‐doped graphene QD (S‐GQD) photodetector for ultraviolet detection.…”

“…Majority of the reports of liquid-exfoliated graphene-based photodetector devices were fabricated by exfoliation of graphene oxide (GO) nanosheets in aqueous solvents, where the GO were obtained by a modified Hummers method [189][190][191] by oxidizing the starting graphite bulk powder. [71][72][73][74]76,78,[82][83][84]293,[323][324][325][326][327][328][329][330] Variety of oxygen-containing functional groups on the basal planes and at the edge sites makes the GO highly hydrophilic and easily dispersible in water and sonicated to achieve the exfoliated state. For further optoelectronic device applications, chemical reduction and/or annealing of GO is required to restore the initial aromatic conjugation structure of graphene and to restore the electrical conductivity.…”