Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

Yang, Jihoon; Yoon, Aram; Lee, Donghyun; Song, Seunguk; Jung, IL John; Lim, Dong‐Hyeok; Jeong, Hongsik; Lee, Zonghoon; Lanza, Mario; Kwon, Soon‐Yong

doi:10.1002/adfm.202309455

Cited by 13 publications

(1 citation statement)

References 45 publications

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“…As mentioned in Sect. 4.2 , in recent years there has been significant effort to alleviate these issues by replacing inaccurate manufacturing techniques such as mechanical exfoliation with chemical vapour deposition allowing for a more uniform distribution of layer thickness [ 16 , 181 ]. In addition to this, there has been further developments into reducing misalignments between grain boundaries and ensuring high crystalline quality of synthesized 2D materials [ 21 ].…”

Section: Conclusion and Perspectivementioning

confidence: 99%

Two-dimensional material-based memristive devices for alternative computing

Panisilvam,

Lee,

Byun

et al. 2024

Nano Convergence

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Two-dimensional (2D) materials have emerged as promising building blocks for next generation memristive devices, owing to their unique electronic, mechanical, and thermal properties, resulting in effective switching mechanisms for charge transport. Memristors are key components in a wide range of applications including neuromorphic computing, which is becoming increasingly important in artificial intelligence applications. Crossbar arrays are an important component in the development of hardware-based neural networks composed of 2D materials. In this paper, we summarize the current state of research on 2D material-based memristive devices utilizing different switching mechanisms, along with the application of these devices in neuromorphic crossbar arrays. Additionally, we discuss the challenges and future directions for the field.

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Section: Conclusion and Perspectivementioning

confidence: 99%

Two-dimensional material-based memristive devices for alternative computing

Panisilvam,

Lee,

Byun

et al. 2024

Nano Convergence

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Conductive Islands Assisted Resistive Switching in Biomimetic Artificial Synapse for Associative Learning and Image Recognition

Jana,

Bhunia,

Paramanik

et al. 2024

Adv Funct Materials

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Solution‐processed memristor devices hold significant potential for advancing synaptic applications, offering scalable, cost‐effective, and efficient solutions for next‐generation neuromorphic systems. These devices replicate the behavior of biological synapses with their gradual and continuous changes in resistance, making them promising for neuromorphic computing and artificial neural networks. However, understanding the temporal characteristics and cumulative effect of successive pulses on the devices is essential for emulating the dynamics of biological synapses. This study proposes a hybrid materials‐based conductive islands‐assisted resistive switching (CIARS) in a solution‐processed active layer consisting of thermally exfoliated graphitic carbon nitride (g‐C3N4 abbreviated as CN) nanosheets embedded with silver nanoparticles (Ag NPs). The fabricated devices demonstrate repeatable and bipolar memory features with a lower operating voltage (≤0.5 V), emulating the frequency and amplitude‐dependent synaptic plasticities. The threshold switching occurs due to the formation of conduction filaments (CFs) of silver ion (Ag+), whereas the analog behavior results from the voltage pulse‐dependent modulation of Schottky barrier height combined with metallic CFs formation. The experimental findings demonstrate the efficacy of the CIARS mechanism within the material platform, highlighting its potential for applications in associative learning, Morse code detection, and image recognition.

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Reconfigurable Artificial Perception System and Logic Gates Based on Large‐Scale Antiambipolar 2D Heterostructure Array

Ren,

Wang,

Xiong

et al. 2024

Adv Funct Materials

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Van der Waals (vdWs) heterostructures enable the fabrication of various optoelectronic devices with unprecedented functionalities, particularly antiambipolar transistors. Different methods have been employed to construct such devices; however, their integration and versatility remain significantly constrained. Here, large‐scale antiambipolar vdWs heterostructure arrays capable of implementing self‐adaptive artificial perception systems and reconfigurable logic gates are verified adopting 2D Te/WS2 heterojunctions for the first time. The resulting transistors allow the modulation of band slope and depletion regions in individual constituents through electrostatic gating, delivering a high rectification ratio of 1.8 × 104. Benefiting from the gate‐tunable antiambipolar characteristic and charge capture, such a device can realize reconfigurable modulation of synaptic plasticity between excitatory and inhibitory modes, enabling the emulation of artificial perception system for the adaptive and subjective perception adjustment in various external environments and also a recognition accuracy of 90.5% for image classification through training and inference simulations. In addition, five fundamental logic gate operations with good stability and reliability, as well as low energy consumption, are achieved in the dual‐gate antiambipolar transistor by tuning the input signals. Furthermore, similar antiambipolar characteristics are also observed from other 2D Te‐based heterostructures, defining a simple, effective, and universal method to create multifunctional antiambipolar transistors.

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Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

Cited by 13 publications

References 45 publications

Two-dimensional material-based memristive devices for alternative computing

Two-dimensional material-based memristive devices for alternative computing

Conductive Islands Assisted Resistive Switching in Biomimetic Artificial Synapse for Associative Learning and Image Recognition

Reconfigurable Artificial Perception System and Logic Gates Based on Large‐Scale Antiambipolar 2D Heterostructure Array

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