Wafer-Size and Single-Crystal MoSe<sub>2</sub> Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting

Chen, Zuxin; Liu, Huiqiang; Chen, Xuechen; Chu, Guang; Chu, Sheng; Zhang, Hang

doi:10.1021/acsami.6b04768

Cited by 78 publications

(63 citation statements)

References 37 publications

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“…Further investigation of PV performance of the junction was analyzed from current‐voltage ( I ‐ V ) curves as illustrated in Figure B. Device exhibits a high V oc of 0.62 V, while the PCE of the cell was 1.29%, which is less than the previously reported efficiencies for MoS 2 /Si and MoS 2 /GaAs SCs . Lin et al reported MoS 2 /hBN/GaAs heterostructure SC by introducing hexagonal boron nitride (hBN) in MoS 2 /GaAs heterojunction .…”

Section: Tmdcs‐based Heterojunction Pv Devicesmentioning

confidence: 91%

“…Chen et al synthesized MoSe 2 layer on single‐crystal GaN via CVD furnace . MoSe 2 fabricated on GaN is composed of better electronic and optoelectronic properties.…”

Section: Tmdcs‐based Heterojunction Pv Devicesmentioning

confidence: 97%

“…A, Schematic illustration of device with MoSe 2 , layer deposited on sapphire substrate. B, Photovoltaic curve of n‐MoSe 2 /p‐GaN [Colour figure can be viewed at wileyonlinelibrary.com]…”

Section: Tmdcs‐based Heterojunction Pv Devicesmentioning

confidence: 99%

“…B, J ‐ V characteristic curve of doped and undoped MoS 2 /hBN/GaAs heterojunction solar cell. C, J ‐ V measurement of MoS 2 /hBN‐GaAs field effect solar cell [Colour figure can be viewed at wileyonlinelibrary.com]…”

Section: Tmdcs‐based Heterojunction Pv Devicesmentioning

confidence: 99%

“…Chen et al synthesized MoSe 2 layer on single-crystal GaN via CVD furnace. 118 MoSe 2 fabricated on GaN is composed of better electronic and optoelectronic properties. Figure 19A demonstrates the schematic illustration of PV cell with MoSe 2 deposited on p-type GaN/spherical substrate.…”

Section: Tmdcs-based Heterojunction Pv Devicesmentioning

confidence: 99%

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Recent advancement in the performance of solar cells by incorporating transition metal dichalcogenides as counter electrode and photoabsorber

et al. 2019

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Summary Two‐dimensional (2D) transition metal dichalcogenides (TMDCs) architectures have revealed fascinating characteristics such as direct band gap, strong light absorption, and novel electrochemical properties, which make them promising materials for photovoltaic applications. The review focuses on (1) the study of electrochemical and photovoltaic properties of TMDCs thereby using them as counter electrodes (CEs) in dye‐sensitized solar cells (DSSCs) and (2) analyzing the light absorption and charge transport performance of TMDCs heterostructures with different 3D materials. We have further investigated different materials in combination with TMDCs such as reduced graphene oxide nanocomposite, graphene flakes, and molybdenum as CEs in DSSCs. Conventionally, platinum (Pt) is used as a CE material for DSSCs that displays excellent catalytic activity and high electrical conductivity but due to the high cost and scarcity of Pt limits the large‐scale production. Therefore, the excellent electrochemical properties and cost‐effectiveness of TMDCs make them promising contender to replace Pt as CEs in DSSCs. Additionally, the photovoltaic properties of TMDCs and their heterostructures with various materials such as silicon, gallium arsenide, indium phosphate, tungsten disulfide, boron nitride, and organic polymers are reviewed. TMDCs are also investigated as hole transport layer (HTL) and electron transport layer (ETL) with various organic polymers such as P3HT, PCBM, PEDOT:PSS, PTB7, and spiro‐OmeTAD for organic and perovskite‐based solar cells (SCs). The utilization of TMDCs as CEs and photoabsorbers enhances the power conversion efficiency (PCE) to generate cost‐effective and high performance SC devices that can be exploit for future technological applications.

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Section: Tmdcs‐based Heterojunction Pv Devicesmentioning

confidence: 91%

“…Chen et al synthesized MoSe 2 layer on single‐crystal GaN via CVD furnace . MoSe 2 fabricated on GaN is composed of better electronic and optoelectronic properties.…”

Section: Tmdcs‐based Heterojunction Pv Devicesmentioning

confidence: 97%

Section: Tmdcs‐based Heterojunction Pv Devicesmentioning

confidence: 99%

Section: Tmdcs‐based Heterojunction Pv Devicesmentioning

confidence: 99%

Section: Tmdcs-based Heterojunction Pv Devicesmentioning

confidence: 99%

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Recent advancement in the performance of solar cells by incorporating transition metal dichalcogenides as counter electrode and photoabsorber

et al. 2019

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Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides through Substitutional Vanadium Doping

Zhang

Wang

Zhang

et al. 2022

Adv Funct Materials

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Semiconducting 2D transition metal dichalcogenides (2D TMDs) with tunable electronic properties are a fundamental prerequisite for the development of next generation advanced electronic/optoelectronic devices. However, controllable and quasi-continuous tuning carrier polarity of monolayered MoS 2 ranging from intrinsic n-type to p-type via ambipolarity still remains a challenge. Herein, quasi-continuous tailoring of carrier polarity of monolayered MoS 2 through substitutional doping of molybdenum (Mo) with vanadium (V) atoms is presented. Atomic distribution in real space characterized by spherical aberration-corrected scanning transmission electron microscopy (Cs-STEM) reveals that the V atoms randomly substitute Mo in monolayered MoS 2 , and its doping concentration can be tuned in a wide range from 0.7 to ≈10 at.%. Electrical measurements confirm that the carrier polarity of the monolayered MoS 2 can be tuned from intrinsic n-type to p-type via ambipolarity depending on the V doping degree, consistent with the density functional theory calculations. Moreover, this doping strategy is demonstrated to extend to other monolayered 2D TMDs by using MoSe 2 as a model material, owing to a good universality.

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Thickness‐Dependent Elastic Softening of Few‐Layer Free‐Standing MoSe₂

et al. 2021

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Few‐layer van der Waals (vdW) materials have been extensively investigated in terms of their exceptional electronic, optoelectronic, optical, and thermal properties. Simultaneously, a complete evaluation of their mechanical properties remains an undeniable challenge due to the small lateral sizes of samples and the limitations of experimental tools. In particular, there is no systematic experimental study providing unambiguous evidence on whether the reduction of vdW thickness down to few layers results in elastic softening or stiffening with respect to the bulk. In this work, micro‐Brillouin light scattering is employed to investigate the anisotropic elastic properties of single‐crystal free‐standing 2H‐MoSe2 as a function of thickness, down to three molecular layers. The so‐called elastic size effect, that is, significant and systematic elastic softening of the material with decreasing numbers of layers is reported. In addition, this approach allows for a complete mechanical examination of few‐layer membranes, that is, their elasticity, residual stress, and thickness, which can be easily extended to other vdW materials. The presented results shed new light on the ongoing debate on the elastic size‐effect and are relevant for performance and durability of implementation of vdW materials as resonators, optoelectronic, and thermoelectric devices.

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Wafer-Size and Single-Crystal MoSe₂ Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting

Cited by 78 publications

References 37 publications

Recent advancement in the performance of solar cells by incorporating transition metal dichalcogenides as counter electrode and photoabsorber

Recent advancement in the performance of solar cells by incorporating transition metal dichalcogenides as counter electrode and photoabsorber

Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides through Substitutional Vanadium Doping

Thickness‐Dependent Elastic Softening of Few‐Layer Free‐Standing MoSe₂

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Wafer-Size and Single-Crystal MoSe2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting

Cited by 78 publications

References 37 publications

Recent advancement in the performance of solar cells by incorporating transition metal dichalcogenides as counter electrode and photoabsorber

Recent advancement in the performance of solar cells by incorporating transition metal dichalcogenides as counter electrode and photoabsorber

Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides through Substitutional Vanadium Doping

Thickness‐Dependent Elastic Softening of Few‐Layer Free‐Standing MoSe2

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Wafer-Size and Single-Crystal MoSe₂ Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting

Thickness‐Dependent Elastic Softening of Few‐Layer Free‐Standing MoSe₂